2N7002E-T1-E3 vs 2N7002LT1G

Cette comparaison détaillée des composants 2N7002E-T1-E3 et 2N7002LT1G vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002LT1G and 2N7002E-T1-E3 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making them functionally interchangeable in most low-power switching and level-shifting applications. Designers should verify gate threshold voltage tolerances and RDS(on) characteristics against their specific circuit requirements before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E-T1-E3 2N7002LT1G
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 240mA (Ta) 115mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 3Ohm @ 250mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V -
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V 50 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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