2N7002E-T1-E3 vs 2N7002V-TP

Cette comparaison détaillée des composants 2N7002E-T1-E3 et 2N7002V-TP vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 and 2N7002V-TP are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched drain-source voltage, continuous drain current, and power dissipation ratings, making them functionally interchangeable in most low-power switching and level-shifting applications. Designers should verify gate threshold voltage tolerance and RDS(on) at the specific drive voltage used in their circuit before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Gate Threshold Voltage Validation required
On-Resistance RDS(on) Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E-T1-E3 2N7002V-TP
Supplier - Micro Commercial Co
Part Status Active Obsolete
FET Type N-Channel 2 N-Channel (Dual)
FET Feature - Standard
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 240mA (Ta) 280mA
Rds On(Max) @ Id Vgs 3Ohm @ 250mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V 50pF @ 25V
Power - Max - 150mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 350mW (Ta) -
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