2N7002E-T1-E3
Siliconix
- Lifecycle
- Active
- Stock
- 7566 PCS
- Package
- SOT-23-3
- Series
- Transistors - FET, MOSFET - simples
Cette comparaison détaillée des composants 2N7002E-T1-E3 et 2N7002V vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.
Replacement verdict
The 2N7002E-T1-E3 and 2N7002V are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making the 2N7002V a viable functional substitute for the 2N7002E-T1-E3 in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific drive conditions before committing to a drop-in replacement.
Siliconix
Fairchild Semiconductor Inc
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| Specification | 2N7002E-T1-E3 | 2N7002V |
|---|---|---|
| Supplier | - | Rochester Electronics, LLC |
| Part Status | Active | Active |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 240mA (Ta) | 280mA |
| Rds On(Max) @ Id Vgs | 3Ohm @ 250mA, 10V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Input Capacitance(Ciss)(Max) @ Vds | 21 pF @ 5 V | 50pF @ 25V |
| Power - Max | - | 250mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | MOSFET (Metal Oxide) | - |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | - |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | - |
| Power Dissipation (Max) | 350mW (Ta) | - |