Part A
2N7002E-T1-E3
Siliconix
- Lifecycle
- Active
- Stock
- 7566 PCS
- Package
- SOT-23-3
- Series
- Transistors - FET, MOSFET - simples
Replacement verdict
Compatible functional replacement candidate
The 2N7002-7-F and 2N7002E-T1-E3 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making them functionally interchangeable in most low-power switching and level-shifting applications. Designers should verify gate threshold voltage tolerance and on-resistance characteristics against their specific circuit requirements before committing to a drop-in substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002-7-F
La société diodes
- Lifecycle
- Active
- Stock
- 5757 PCS
- Package
- SOT-23-3
- Series
- Transistors - FET, MOSFET - simples
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002-7-F | 2N7002E-T1-E3 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Sets the maximum voltage the MOSFET can block; must be equal or higher than the application rail voltage. |
| Continuous Drain Current (Id) | 115 mA | 240 mA | Determines the maximum load current the device can carry continuously; higher Id allows driving heavier loads. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω @ 10 V, 500 mA | 1.8 Ω @ 10 V, 500 mA | Lower Rds(on) reduces conduction losses and heat dissipation, improving efficiency in switching and load-driving circuits. |
| Gate Threshold Voltage (Vgs(th)) | 1 V to 2.5 V | 1 V to 2.5 V | Defines the gate voltage at which the device begins to conduct; affects compatibility with logic-level drive signals. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Limits the maximum gate drive voltage to avoid damaging the gate oxide; must exceed the driving signal amplitude. |
| Power Dissipation (Pd) | 200 mW | 350 mW | Indicates how much power the package can dissipate; higher Pd supports higher current or more frequent switching. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; lower capacitance enables faster transitions. |
| Package / Mounting | SOT-23, Surface Mount | SOT-23, Surface Mount | Must match the PCB footprint and assembly process for direct drop-in substitution. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; must cover the ambient and self-heating conditions of the application. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002E-T1-E3 | 2N7002-7-F |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 240mA (Ta) | 115mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 250mA, 10V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 21 pF @ 5 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the 2N7002-7-F and the 2N7002E-T1-E3?
The 2N7002-7-F is a 60 V, 115 mA N-channel enhancement mode MOSFET in a SOT-23 package from Diodes Incorporated. The 2N7002E-T1-E3 is a 60 V, 240 mA N-channel enhancement mode MOSFET in a SOT-23 package from Vishay Siliconix. The 2N7002E-T1-E3 offers higher continuous drain current and lower on-resistance, while both share the same package and basic voltage rating.
Are the 2N7002-7-F and 2N7002E-T1-E3 pin-compatible?
Yes. Both devices use the standard SOT-23 package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This allows them to be used in the same PCB footprint, provided the electrical differences are acceptable for the application.
Can the 2N7002-7-F and 2N7002E-T1-E3 be used interchangeably in low-current switching applications?
In many low-current switching applications below 115 mA and 60 V, they can often be interchanged. However, the 2N7002E-T1-E3 has a higher current rating and lower RDS(on), so substituting the 2N7002-7-F into a circuit designed for the 2N7002E-T1-E3 may reduce margin. Always verify gate threshold, RDS(on), and thermal conditions against the specific circuit requirements.
What is the continuous drain current rating for each device?
The 2N7002-7-F has a continuous drain current rating of 115 mA at 25°C. The 2N7002E-T1-E3 has a continuous drain current rating of 240 mA at 25°C. These ratings are based on manufacturer datasheets and are subject to derating at elevated temperatures.
How does the on-resistance (RDS(on)) compare between the two MOSFETs?
The 2N7002-7-F specifies RDS(on) of 7.5 Ω maximum at VGS = 10 V and ID = 500 mA. The 2N7002E-T1-E3 specifies RDS(on) of 5 Ω maximum at VGS = 10 V and ID = 500 mA. The 2N7002E-T1-E3 therefore has lower conduction losses under the same test conditions.
What are the gate threshold voltage ranges for the 2N7002-7-F and 2N7002E-T1-E3?
The 2N7002-7-F has a gate threshold voltage (VGS(th)) range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002E-T1-E3 has a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. Both devices have similar threshold characteristics.
Do both devices meet the same qualification or compliance standards?
Both the 2N7002-7-F and 2N7002E-T1-E3 are RoHS-compliant and halogen-free according to their respective manufacturer datasheets. The 2N7002E-T1-E3 is also AEC-Q101 qualified for automotive applications, while the 2N7002-7-F is not specified as AEC-Q101 qualified in its standard datasheet. Designers requiring automotive qualification should verify the specific part number and qualification status with the manufacturer.
Which device is better suited for higher-power or higher-current designs?
The 2N7002E-T1-E3 is better suited for higher-current designs because it has a higher continuous drain current rating (240 mA vs. 115 mA) and lower RDS(on) (5 Ω vs. 7.5 Ω at VGS = 10 V). For designs approaching or exceeding 115 mA, the 2N7002E-T1-E3 provides greater margin and lower power dissipation.