2N7002DW vs 2N7002E-T1-E3

Cette comparaison détaillée des composants 2N7002DW et 2N7002E-T1-E3 vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002E-T1-E3 are both 60 V logic-level N-channel MOSFETs in SOT-23 packages, making the 2N7002E-T1-E3 a viable functional replacement candidate for the 2N7002DW in single-channel applications. However, the 2N7002DW is a dual-channel device, so designers must account for the difference in channel count and verify that the single MOSFET of the 2N7002E-T1-E3 can satisfy the circuit's switching requirements before substituting.

Channel Count Validation required
Drain-Source Voltage Rating High match
Package Type High match
Continuous Drain Current Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002DW 2N7002E-T1-E3
Part Status Active Active
FET Type - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V 60 V
Current - Continuous Drain(Id) @ 25°C - 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id - 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 0.6 nC @ 4.5 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 21 pF @ 5 V
Power Dissipation (Max) - 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number 2N7002 -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Current - Continuous Drain (Id) @ 25°C 115mA -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V -
Vgs(th) (Max) @ Id 2V @ 250µA -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V -
Power - Max 200mW -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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