2N7002E-T1-E3 vs 2N7002CK

Cette comparaison détaillée des composants 2N7002E-T1-E3 et 2N7002CK vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002CK and 2N7002E-T1-E3 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional replacement candidate for the 2N7002E-T1-E3 in most low-power switching applications. Designers should verify gate threshold voltage tolerances and RDS(on) characteristics against their specific circuit requirements before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
On-Resistance RDS(on) Validation required
Package Type High match

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E-T1-E3 2N7002CK
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 240mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 3Ohm @ 250mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V -
Power Dissipation (Max) 350mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
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