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IXTU01N100D
+NomenclatureMOSFET N-CH 1000V 400MA TO251
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FabricantLa société ixys
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Pièce fabricant #IXTU01N100D
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Fiche technique IXTU01N100D DataSheet
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En stock4154
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Spécifications
| Attribut | Valeur |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | Depletion |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 400mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 0V |
| Rds On(Max) @ Id Vgs | 80Ohm @ 50mA, 0V |
| Vgs(th)(Max) @ Id | 4.5V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 5.8 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 100 pF @ 25 V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.1W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251AA |
