IXTY1R6N100D2

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IXTY1R6N100D2

+Nomenclature

MOSFET N-CH 1000V 1.6A TO252

  • FabricantLa société ixys

  • Pièce fabricant #IXTY1R6N100D2

  • Package TO-252-3

  • En stock4430

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Spécifications

Attribut Valeur
Package / Case Tube
Series Depletion
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 1.6A (Tc)
Rds On(Max) @ Id Vgs 10Ohm @ 800mA, 0V
Gate Charge(Qg)(Max) @ Vgs 27 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 645 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Présentation

Description

"Introduction to IXTY1R6N100D2" likely refers to a specific component, product, or concept, potentially within electronics or a specialized field. Given the format, IXTY1R6N100D2 could be a part number or model identifier, commonly used in industries like semiconductors or technology. These identifiers help in precisely locating and describing specific components, ensuring compatibility and understanding among professionals. If IXTY1R6N100D2 is, for instance, a semiconductor or electronic component, an introduction would cover its basic specifications such as voltage, current ratings, packaging type, and typical applications. It might also touch on the manufacturer's details and any unique features that distinguish it from similar products. For a more thorough understanding, one would typically consult datasheets or product manuals provided by the manufacturer, which offer detailed technical specs, usage guidelines, and performance characteristics. Without specific context or industry information, the introduction remains general, emphasizing its role in technical identification and application.

Equivalent

The IXTY1R6N100D2 is a MOSFET manufactured by IXYS. Equivalent products with similar specifications typically include MOSFETs from other manufacturers such as the IRFB4110 from Infineon or the NXP PSMN1R2-25YLC. Always compare specific parameters like voltage, current, and Rds(on) to ensure compatibility for your application. Additionally, check other manufacturers like STMicroelectronics or ON Semiconductor for similar high-power MOSFET options. Always verify with datasheets for precise matching.

Features

The IXTY1R6N100D2 is a power MOSFET manufactured by Infineon Technologies. Here are its key features:
1. Voltage Rating: It has a drain-source voltage (V_ds) rating of 100V.
2. Current Rating: The continuous drain current (I_d) is typically rated at 1.6A.
3. R_DS(on): It features a low on-resistance, optimizing performance and efficiency.
4. Technology: Utilizes Infineon’s OptiMOS technology, which is designed for reduced conduction losses and improved switching performance.
5. Package: The device is typically available in a TO-220 package, which is commonly used for power transistors.
6. Applications: Suitable for use in various applications, including DC-DC converters, power management, and motor control.
7. Temperature Range: The component is designed to operate efficiently over a wide temperature range.
8. Efficiency: Engineered for high efficiency in switching applications, contributing to energy savings and reduced heat generation.
These features make the IXTY1R6N100D2 suitable for high-efficiency power conversion and switching applications.

Pinout

The IXTY1R6N100D2 is an N-channel MOSFET. It typically comes in a TO-220 package, which generally has three pins. These pins are:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - The drain is where the current flows out of the transistor when it is in the "on" state.
3. Source (S) - This is the pin where current enters the transistor.
The device is designed for high voltage and high current applications. It is often used in power management applications, switching power supplies, and motor drives. Its features typically include low on-resistance and fast switching speeds, making it suitable for efficient power control. Always refer to the manufacturer's datasheet for detailed specifications and pin configuration.

Manufacturer

The IXTY1R6N100D2 is manufactured by IXYS Corporation. IXYS is a company that specializes in the design, development, and marketing of high-performance power semiconductor devices and integrated circuits (ICs). The company provides a wide range of products, including power MOSFETs, IGBTs, power diodes and rectifiers, and ICs for power management. IXYS's products are used in various applications such as industrial, telecommunications, automotive, medical, and consumer electronics. In 2018, IXYS was acquired by Littelfuse, a company known for its circuit protection products, thereby expanding its reach and product offerings in the semiconductor industry.

Application

The IXTY1R6N100D2 is a power MOSFET typically used in applications requiring efficient power management and switching capabilities. Its primary application areas include power supplies, motor control, and DC-DC converters. This device is also suitable for use in industrial and consumer electronics where efficient voltage regulation and power conversion are needed. Additionally, it is found in automotive systems, specifically in electronic control units (ECUs) and battery management systems, due to its ability to handle high currents and voltages. Its robust performance makes it ideal for applications requiring high-speed switching and low conduction losses.

Package

The IXTY1R6N100D2 is a power MOSFET with a TO-220 package type. This package is commonly used for high-power components due to its ability to dissipate heat effectively.

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