IXFH46N65X2

Images à titre indicatif uniquement

IXFH46N65X2

+Nomenclature

MOSFET N-CH 650V 46A TO247

  • FabricantLa société ixys

  • Pièce fabricant #IXFH46N65X2

  • Package TO-247-3

  • En stock1463

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Package / Case Tube
Series HiPerFET™, Ultra X2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 46A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 76mOhm @ 23A, 10V
Vgs(th)(Max) @ Id 5.5V @ 4mA
Gate Charge(Qg)(Max) @ Vgs 75 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 4810 pF @ 25 V
Power Dissipation (Max) 660W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)

Présentation

Description

The IXFH46N65X2 is a high-performance 650V, 46A N-channel IGBT from Infineon, designed for power switching applications. Key features include:
- Low VCE(sat) (1.55V typical) for reduced conduction losses.
- Fast switching with low turn-off losses, improving efficiency.
- High current capability (46A continuous, 92A pulsed).
- Robust design with short-circuit withstand time (5µs).
It’s ideal for UPS systems, motor drives, and industrial inverters, offering a balance of efficiency and thermal performance. The device comes in a TO-247 package for effective heat dissipation.
For detailed specs, refer to Infineon’s datasheet.

Equivalent

Equivalent products to the IXFH46N65X2 (650V, 46A MOSFET) include:
- Infineon IPA60R190P7XKSA1
- STMicroelectronics STW46N65M5
- ON Semiconductor NTHL046N65S3F
- Toshiba TK46A65W
These alternatives offer similar voltage, current, and performance characteristics. Always verify datasheets for exact compatibility.

Features

The IXFH46N65X2 is a 650V, 46A N-channel IGBT with the following key features:
- High Voltage Rating: 650V breakdown voltage, suitable for high-power applications.
- Low VCE(sat): Reduced conduction losses for improved efficiency.
- Fast Switching: Optimized for high-frequency operation.
- Robust Design: High short-circuit withstand capability (10µs).
- Low Thermal Resistance: Efficient heat dissipation (TO-247 package).
- Wide Operating Temperature: -55°C to +150°C.
Commonly used in inverters, motor drives, and power supplies.

Application

The IXFH46N65X2 is a 650V, 46A N-channel MOSFET designed for high-power applications. Key application areas include:
1. Switched-Mode Power Supplies (SMPS) – Used in AC-DC and DC-DC converters.
2. Motor Drives – Efficient switching in industrial and automotive motor control systems.
3. Solar Inverters – Power conversion in renewable energy systems.
4. Uninterruptible Power Supplies (UPS) – Ensures reliable energy backup.
5. Induction Heating – High-frequency power switching for heating applications.
Its low on-resistance and fast switching make it ideal for energy-efficient, high-performance systems.

Package

The IXFH46N65X2 is a 650V, 46A N-channel IGBT in a TO-247 package. This package type is widely used for high-power applications due to its robust thermal and electrical performance, featuring three leads for gate, collector, and emitter connections. It is suitable for switching applications like motor drives and inverters.

Produits liés à IXFH46N65X2

  • Devis rapide

  • Envoyez votre demande de devis pour IXFH46N65X2 Utilisez ce formulaire. Nous vous répondrons sous 12 heures.