Images à titre indicatif uniquement
IXTN210P10T
+NomenclatureMOSFET P-CH 100V 210A SOT227B
-
FabricantLa société ixys
-
Pièce fabricant #IXTN210P10T
-
Package SOT-227-4
-
En stock3950
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | TrenchP™ |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 210A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 7.5mOhm @ 105A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 740 nC @ 10 V |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 69500 pF @ 25 V |
| Power Dissipation (Max) | 830W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
Présentation
Description
"Introduction to IXTN210P10T" likely refers to a course, module, or document related to a specific subject, potentially within a technical or academic discipline. Since "IXTN210P10T" appears to be a code or identifier rather than a widely recognized term, its exact content or focus isn't clear without additional context. Generally, introductions to such topics aim to provide a foundational understanding, covering fundamental concepts, key principles, and essential terminology.
If the course is technical, it might include an overview of relevant theories, methodologies, and applications. If it's part of an academic curriculum, the introduction might outline learning objectives, expected outcomes, and assessment methods. Without more information, it’s challenging to give a precise summary, but the introductory section usually serves to orient learners or readers, offering them a roadmap for what to expect and how to approach the subject matter. If you have access to more details about IXTN210P10T, such as a syllabus or description, it would clarify its specific focus and content.
If the course is technical, it might include an overview of relevant theories, methodologies, and applications. If it's part of an academic curriculum, the introduction might outline learning objectives, expected outcomes, and assessment methods. Without more information, it’s challenging to give a precise summary, but the introductory section usually serves to orient learners or readers, offering them a roadmap for what to expect and how to approach the subject matter. If you have access to more details about IXTN210P10T, such as a syllabus or description, it would clarify its specific focus and content.
Equivalent
The IXTN210P10T is a high-current, high-voltage IGBT (Insulated Gate Bipolar Transistor). Equivalent products are those that match its specifications, such as voltage, current ratings, and package type. Potential equivalents might include:
- Infineon Technologies IKW40N120H3
- ON Semiconductor FGA50N120FTD
- STMicroelectronics STGW30NC120HD
Always verify the specifications and application requirements before substituting components to ensure compatibility.
- Infineon Technologies IKW40N120H3
- ON Semiconductor FGA50N120FTD
- STMicroelectronics STGW30NC120HD
Always verify the specifications and application requirements before substituting components to ensure compatibility.
Features
The IXTN210P10T is a power MOSFET designed for use in various electronic applications. Below are its key features:
1. N-Channel MOSFET: It is an N-channel enhancement mode transistor, which allows for high-speed switching and efficient load management.
2. High Voltage Tolerance: The device is rated for a drain-source voltage (V_DS) typically around 100V, making it suitable for medium to high voltage applications.
3. Current Handling: It can handle significant current loads, with a continuous drain current (I_D) rating that can vary depending on the specific package and operating conditions.
4. Low On-Resistance: The MOSFET features low on-state resistance (R_DS(on)), which reduces power loss during operation and improves efficiency.
5. Fast Switching: The device is capable of fast switching speeds, which is beneficial for applications requiring quick response times.
6. Thermal Performance: It often includes efficient thermal management features, allowing it to dissipate heat effectively and maintain performance under varying temperature conditions.
These features make the IXTN210P10T suitable for use in power management, motor controls, and other applications requiring reliable switching performance.
1. N-Channel MOSFET: It is an N-channel enhancement mode transistor, which allows for high-speed switching and efficient load management.
2. High Voltage Tolerance: The device is rated for a drain-source voltage (V_DS) typically around 100V, making it suitable for medium to high voltage applications.
3. Current Handling: It can handle significant current loads, with a continuous drain current (I_D) rating that can vary depending on the specific package and operating conditions.
4. Low On-Resistance: The MOSFET features low on-state resistance (R_DS(on)), which reduces power loss during operation and improves efficiency.
5. Fast Switching: The device is capable of fast switching speeds, which is beneficial for applications requiring quick response times.
6. Thermal Performance: It often includes efficient thermal management features, allowing it to dissipate heat effectively and maintain performance under varying temperature conditions.
These features make the IXTN210P10T suitable for use in power management, motor controls, and other applications requiring reliable switching performance.
Pinout
The IXTN210P10T is a power MOSFET manufactured by IXYS Corporation. It is typically used in high-power applications due to its capability to handle high currents and voltages. The device comes in a TO-268 package, which is also known as a TO-268AA or D^3PAK. This package includes three pins:
1. Gate (G): This pin is used to control the MOSFET's operation. By applying the appropriate voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the main current-carrying terminal. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This terminal completes the circuit and is typically connected to ground or the return path in a circuit.
The IXTN210P10T is designed for applications that require efficient switching and high thermal performance. Its primary function is to act as an electronic switch or amplifier in various power electronics applications.
1. Gate (G): This pin is used to control the MOSFET's operation. By applying the appropriate voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the main current-carrying terminal. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This terminal completes the circuit and is typically connected to ground or the return path in a circuit.
The IXTN210P10T is designed for applications that require efficient switching and high thermal performance. Its primary function is to act as an electronic switch or amplifier in various power electronics applications.
Manufacturer
The IXTN210P10T is manufactured by IXYS Corporation. IXYS is a company that specializes in the development and manufacturing of power semiconductors and integrated circuits for various applications. The company focuses on high-efficiency power solutions and provides products for industries such as telecommunications, automotive, consumer electronics, industrial control, and more. IXYS has built a reputation for innovation in semiconductor technology, particularly in power management and efficiency.
Application
The IXTN210P10T is a type of power MOSFET, commonly used in applications requiring efficient power management and high-speed switching. Its application areas include:
1. Power Supply Units: Used in AC/DC and DC/DC converters for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive settings.
3. Renewable Energy Systems: Applied in solar inverters and wind turbine converters.
4. Battery Management: Utilized in battery protection and charging circuits.
5. Lighting Systems: Helps in driving LEDs efficiently in lighting applications.
6. Uninterruptible Power Supplies (UPS): Used for reliable power backup solutions.
These applications leverage its high current capacity, low on-resistance, and fast switching capabilities.
1. Power Supply Units: Used in AC/DC and DC/DC converters for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive settings.
3. Renewable Energy Systems: Applied in solar inverters and wind turbine converters.
4. Battery Management: Utilized in battery protection and charging circuits.
5. Lighting Systems: Helps in driving LEDs efficiently in lighting applications.
6. Uninterruptible Power Supplies (UPS): Used for reliable power backup solutions.
These applications leverage its high current capacity, low on-resistance, and fast switching capabilities.
Package
The IXTN210P10T is a power MOSFET with a TO-264 package type. The TO-264 is a type of through-hole package known for its capability to handle high power and high current, commonly used in applications requiring efficient heat dissipation.
