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IXTD3N50P-2J
+NomenclatureMOSFET N-CH 500V 3A DIE
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FabricantLa société ixys
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Pièce fabricant #IXTD3N50P-2J
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En stock5238
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Spécifications
| Attribut | Valeur |
| Supplier | IXYS |
| Package / Case | Bulk |
| Series | PolarHV™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 1.5A, 10V |
| Vgs(th)(Max) @ Id | 5.5V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 9.3 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 409 pF @ 25 V |
| Power Dissipation (Max) | 70W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
