IXFY5N50P3

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IXFY5N50P3

+Nomenclature

MOSFET N-CH 500V 5A TO252

  • FabricantLa société ixys

  • Pièce fabricant #IXFY5N50P3

  • En stock4433

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Spécifications

Attribut Valeur
Supplier IXYS
Package / Case Tube
Series HiPerFET™, Polar3™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 5A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1.65Ohm @ 2.5A, 10V
Vgs(th)(Max) @ Id 5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 6.9 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 370 pF @ 25 V
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA