IXFN48N50

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IXFN48N50

+Nomenclature

MOSFET N-CH 500V 48A SOT-227B

  • FabricantLa société ixys

  • Pièce fabricant #IXFN48N50

  • Package SOT-227-4

  • En stock4358

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Spécifications

Attribut Valeur
Package / Case Tube
Series HiPerFET™
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 48A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 100mOhm @ 500mA, 10V
Vgs(th)(Max) @ Id 4V @ 8mA
Gate Charge(Qg)(Max) @ Vgs 270 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 8400 pF @ 25 V
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B

Présentation

Description

The IXFN48N50 is a high-performance N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 500V
- Current Rating: 48A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.062Ω, reducing conduction losses
- Fast Switching: Optimized for efficiency in high-frequency circuits
- Robust Design: Suitable for industrial, automotive, and power supply systems
Common applications include switch-mode power supplies (SMPS), motor drives, and inverters. Its high current handling and low RDS(on) make it ideal for demanding environments.
For detailed specifications, refer to the datasheet from the manufacturer (e.g., IXYS or Littelfuse).

Equivalent

Equivalent products to the IXFN48N50 (500V, 48A N-channel MOSFET) include:
- IRFP450 (500V, 14A, higher Rds(on))
- STP55NF06L (60V, 55A, lower voltage)
- FDPF51N25 (250V, 51A, lower voltage)
- IXFH48N50P (similar specs, same series)
For exact replacements, check IXFH48N50P or IXTA48N50P from IXYS. Verify voltage, current, and package compatibility.

Features

The IXFN48N50 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 500V
- Current Rating: 48A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.062Ω (max 0.075Ω) at VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Robust Design: High avalanche energy capability
- Package: TO-247 (3-pin), suitable for high-power applications
- Gate Charge (Qg): ~110nC (typical), ensuring efficient switching
Ideal for power supplies, motor drives, and inverters due to its high efficiency and reliability.

Application

The IXFN48N50 is a 500V N-channel MOSFET designed for high-power applications. Key application areas include:
1. Switched-Mode Power Supplies (SMPS) – Efficient power conversion in AC/DC and DC/DC systems.
2. Motor Drives – Control and drive circuits for industrial and automotive motors.
3. Inverters – Used in solar inverters and UPS systems for energy conversion.
4. Industrial Automation – High-current switching in robotics and machinery.
5. Electric Vehicle (EV) Systems – Power management in charging and traction systems.
Its low on-resistance (RDS(on)) and high current handling (48A) make it suitable for demanding high-efficiency applications.

Package

The IXFN48N50 is packaged in a TO-264 (also known as TO-263-3 or D²PAK), a surface-mount power transistor package. It features a large metal tab for heat dissipation, three leads, and is commonly used for high-power applications. The package is robust, suitable for high-current and high-voltage operations, and is widely used in power electronics.

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