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IXFH80N65X2
+NomenclatureMOSFET N-CH 650V 80A TO247
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FabricantLa société ixys
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Pièce fabricant #IXFH80N65X2
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Package TO-247-3
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En stock3106
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | HiPerFET™, Ultra X2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 4mA |
| GateCharge(Qg)(Max)@Vgs | 143 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 8245 pF @ 25 V |
| PowerDissipation(Max) | 890W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 (IXTH) |
Présentation
Description
The IXFH80N65X2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. This component is part of a family of devices known for their robustness and efficiency, suitable for use in various demanding environments. Key features include a drain-source voltage (V_DS) rating of 650V and a continuous drain current (I_D) of 80A, enabling it to handle substantial power loads.
The IXFH80N65X2 is built using advanced technologies that enhance its fast switching capabilities, making it ideal for applications like switch-mode power supplies, motor drives, and inverters. Its low on-state resistance (R_DS(on)) reduces power loss, improving overall system efficiency. The device is also equipped with a fast body diode, which aids in minimizing energy loss during reverse recovery processes.
Packaged typically in a TO-264 format, this MOSFET is designed to provide excellent thermal performance and easy integration into various electronic circuits. Overall, the IXFH80N65X2 is a versatile and reliable choice for high-power electronic systems.
The IXFH80N65X2 is built using advanced technologies that enhance its fast switching capabilities, making it ideal for applications like switch-mode power supplies, motor drives, and inverters. Its low on-state resistance (R_DS(on)) reduces power loss, improving overall system efficiency. The device is also equipped with a fast body diode, which aids in minimizing energy loss during reverse recovery processes.
Packaged typically in a TO-264 format, this MOSFET is designed to provide excellent thermal performance and easy integration into various electronic circuits. Overall, the IXFH80N65X2 is a versatile and reliable choice for high-power electronic systems.
Equivalent
The IXFH80N65X2 is a 650V, 80A N-channel MOSFET. Equivalent or similar products include:
1. STMicroelectronics STW80N65M5
2. Infineon Technologies IPW80R650P6
3. ON Semiconductor FCP80N60
4. Vishay Siliconix SiHG80N60E
These equivalents may vary slightly in specifications, so it is important to review the datasheets for exact matching parameters such as Rds(on), Qg, and package type to ensure suitability for your application.
1. STMicroelectronics STW80N65M5
2. Infineon Technologies IPW80R650P6
3. ON Semiconductor FCP80N60
4. Vishay Siliconix SiHG80N60E
These equivalents may vary slightly in specifications, so it is important to review the datasheets for exact matching parameters such as Rds(on), Qg, and package type to ensure suitability for your application.
Features
The IXFH80N65X2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by IXYS Corporation, designed for applications requiring high efficiency and fast switching. Here are some of its key features:
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 650V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 80A, which allows it to handle significant power loads.
3. Low On-Resistance: It features a low on-state resistance (R_DS(on)), ensuring minimal power loss and higher efficiency during operation.
4. Fast Switching: Designed for fast switching speeds, it improves the efficiency and performance of power conversion systems.
5. Package Type: The device is available in a TO-247 package, which provides good thermal performance and ease of mounting.
6. Robust Design: It features rugged construction that can handle voltage spikes and thermal stress, enhancing reliability.
These features make the IXFH80N65X2 suitable for use in applications such as SMPS (Switch Mode Power Supplies), motor drives, and other high-power electronic systems.
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 650V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 80A, which allows it to handle significant power loads.
3. Low On-Resistance: It features a low on-state resistance (R_DS(on)), ensuring minimal power loss and higher efficiency during operation.
4. Fast Switching: Designed for fast switching speeds, it improves the efficiency and performance of power conversion systems.
5. Package Type: The device is available in a TO-247 package, which provides good thermal performance and ease of mounting.
6. Robust Design: It features rugged construction that can handle voltage spikes and thermal stress, enhancing reliability.
These features make the IXFH80N65X2 suitable for use in applications such as SMPS (Switch Mode Power Supplies), motor drives, and other high-power electronic systems.
Pinout
The IXFH80N65X2 is a power MOSFET transistor produced by IXYS Corporation. It typically comes in a TO-247 package, which is a type of through-hole package commonly used for high-power transistors. The TO-247 package generally has three pins, and for the IXFH80N65X2, these are:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET from the load.
3. Source (S): This pin is where the current exits the MOSFET to return to the power supply.
The IXFH80N65X2 is designed for high-efficiency applications and is capable of handling high voltages and currents, making it suitable for power switching applications. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET from the load.
3. Source (S): This pin is where the current exits the MOSFET to return to the power supply.
The IXFH80N65X2 is designed for high-efficiency applications and is capable of handling high voltages and currents, making it suitable for power switching applications. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.
Manufacturer
The IXFH80N65X2 is manufactured by IXYS Corporation. IXYS is a company known for designing and producing power semiconductors and integrated circuits. Founded in 1983, IXYS is recognized for its innovations in power electronics. The company’s products are utilized in a variety of applications including power conversion, motor control, and renewable energy.
In 2018, IXYS Corporation was acquired by Littelfuse, Inc., a global manufacturer specializing in circuit protection, power control, and sensor technologies. Littelfuse serves diverse markets, including electronics, automotive, and industrial sectors. Through this acquisition, IXYS has continued to contribute to Littelfuse’s portfolio with its expertise in power semiconductor devices, thereby expanding its reach and capabilities in the power electronics industry.
In 2018, IXYS Corporation was acquired by Littelfuse, Inc., a global manufacturer specializing in circuit protection, power control, and sensor technologies. Littelfuse serves diverse markets, including electronics, automotive, and industrial sectors. Through this acquisition, IXYS has continued to contribute to Littelfuse’s portfolio with its expertise in power semiconductor devices, thereby expanding its reach and capabilities in the power electronics industry.
Application
The IXFH80N65X2 is a power MOSFET known for its high current and voltage handling capabilities, making it suitable for various applications. Key areas include:
1. Switch Mode Power Supplies (SMPS): Utilized for efficient power conversion.
2. Motor Drives: Ideal for controlling electric motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Provides reliable power backup solutions.
4. Inverters: Used in solar power systems and industrial applications for DC to AC conversion.
5. Lighting Systems: Supports high-intensity discharge and LED lighting.
6. Induction Heating: Plays a role in high-frequency applications.
7. Power Tools: Ensures efficient operation and control in cordless tools.
These applications benefit from its low on-resistance and high-speed switching capabilities.
1. Switch Mode Power Supplies (SMPS): Utilized for efficient power conversion.
2. Motor Drives: Ideal for controlling electric motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Provides reliable power backup solutions.
4. Inverters: Used in solar power systems and industrial applications for DC to AC conversion.
5. Lighting Systems: Supports high-intensity discharge and LED lighting.
6. Induction Heating: Plays a role in high-frequency applications.
7. Power Tools: Ensures efficient operation and control in cordless tools.
These applications benefit from its low on-resistance and high-speed switching capabilities.
Package
The IXFH80N65X2 is a power MOSFET, and its package type is TO-247.
