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IXFH20N85X
+NomenclatureMOSFET N-CH 850V 20A TO247
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FabricantLa société ixys
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Pièce fabricant #IXFH20N85X
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Package TO-247-3
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En stock3042
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | HiPerFET™, Ultra X |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 850 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 330mOhm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 5.5V @ 2.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1660 pF @ 25 V |
| Power Dissipation (Max) | 540W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
Présentation
Description
The IXFH20N85X is a high-voltage N-channel MOSFET developed by IXYS Corporation. It is designed for robust performance in power switching applications, making it ideal for use in environments demanding high efficiency and reliability. The MOSFET features a voltage rating of 850V, a continuous drain current of 20A, and a low on-resistance, which minimizes power loss and improves overall system efficiency. Additionally, its TO-247 package enhances thermal performance, which is crucial for handling high power levels. The device is often employed in various applications, such as power supplies, motor drives, and renewable energy systems, where efficient energy conversion and management are key. The IXFH20N85X's ability to handle high voltages and currents, combined with its rugged construction, makes it a versatile component in industrial and commercial power electronics.
Equivalent
The IXFH20N85X is an N-channel MOSFET, and potential equivalent products could include:
1. STMicroelectronics STP24N60DM2 - N-channel 600V, 20A
2. Infineon IPP60R190C6 - N-channel 600V, 20A
3. Vishay IRF840 - N-channel 500V, 8A
Please verify voltage, current, and package specifications as exact equivalents may not be available, and some parameters may differ slightly.
1. STMicroelectronics STP24N60DM2 - N-channel 600V, 20A
2. Infineon IPP60R190C6 - N-channel 600V, 20A
3. Vishay IRF840 - N-channel 500V, 8A
Please verify voltage, current, and package specifications as exact equivalents may not be available, and some parameters may differ slightly.
Features
The IXFH20N85X is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its robustness and efficiency, designed by IXYS Corporation. Key features include:
1. N-Channel: It has an N-channel configuration, which is typical for high-speed switching applications.
2. Voltage and Current: The device can handle a maximum drain-source voltage (V_DS) of 850V and a continuous drain current (I_D) of 20A.
3. R_DS(on): It offers a low on-state resistance, which minimizes power loss and heating during operation, enhancing efficiency.
4. Fast Switching: The MOSFET is designed for fast switching, which is crucial for high-frequency applications.
5. Package: It comes in a TO-247 package, providing effective heat dissipation.
6. Applications: It’s suitable for various applications including power supplies, motor drives, and other high-voltage systems.
7. Thermal and Electrical Performance: Enhanced thermal performance and electrical characteristics make it reliable for demanding environments.
These features make the IXFH20N85X suitable for a range of high-voltage, high-power applications.
1. N-Channel: It has an N-channel configuration, which is typical for high-speed switching applications.
2. Voltage and Current: The device can handle a maximum drain-source voltage (V_DS) of 850V and a continuous drain current (I_D) of 20A.
3. R_DS(on): It offers a low on-state resistance, which minimizes power loss and heating during operation, enhancing efficiency.
4. Fast Switching: The MOSFET is designed for fast switching, which is crucial for high-frequency applications.
5. Package: It comes in a TO-247 package, providing effective heat dissipation.
6. Applications: It’s suitable for various applications including power supplies, motor drives, and other high-voltage systems.
7. Thermal and Electrical Performance: Enhanced thermal performance and electrical characteristics make it reliable for demanding environments.
These features make the IXFH20N85X suitable for a range of high-voltage, high-power applications.
Pinout
The IXFH20N85X is a power MOSFET transistor designed for high-speed switching applications. It comes in a TO-247 package, which typically has three pins. The pin count and their respective functions are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. By applying a voltage to the gate, the device is turned on or off.
2. Drain (D): This is the main terminal through which the current flows when the MOSFET is in the 'on' state. It's connected to the main power supply or load.
3. Source (S): This terminal is connected to the ground or return path of the circuit. The current exits the MOSFET through this pin when it is in the 'on' state.
The IXFH20N85X is characterized by its high voltage rating of 850V and a continuous drain current capability of 20A, making it suitable for high-power applications.
1. Gate (G): This pin is used to control the operation of the MOSFET. By applying a voltage to the gate, the device is turned on or off.
2. Drain (D): This is the main terminal through which the current flows when the MOSFET is in the 'on' state. It's connected to the main power supply or load.
3. Source (S): This terminal is connected to the ground or return path of the circuit. The current exits the MOSFET through this pin when it is in the 'on' state.
The IXFH20N85X is characterized by its high voltage rating of 850V and a continuous drain current capability of 20A, making it suitable for high-power applications.
Manufacturer
The IXFH20N85X is manufactured by IXYS Corporation, which is a part of Littelfuse, Inc. IXYS is known for producing power semiconductors and integrated circuits. The company specializes in high-performance products used for power management, energy efficiency, and renewable energy applications. IXYS's product portfolio includes power MOSFETs, IGBTs, diodes, rectifiers, and other power semiconductors that are designed to improve the efficiency and reliability of electronic systems. As part of Littelfuse, IXYS benefits from a broader scope in providing protection and control solutions across various industries, including automotive, industrial, telecommunications, consumer electronics, and more.
Application
The IXFH20N85X is a high-voltage, N-channel MOSFET designed for various applications. Its primary uses include:
1. Power Supply Units: Efficient switching in AC-DC and DC-DC converters.
2. Motor Drives: Suitable for controlling motors in industrial and consumer applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Lighting: Effective in high-intensity discharge (HID) and LED lighting systems.
5. Industrial Equipment: Used in welding machines and induction heating systems.
6. HVAC Systems: For efficient power management in heating, ventilation, and air conditioning systems.
These applications benefit from the MOSFET's high voltage rating and low on-resistance, ensuring efficient and reliable performance.
1. Power Supply Units: Efficient switching in AC-DC and DC-DC converters.
2. Motor Drives: Suitable for controlling motors in industrial and consumer applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Lighting: Effective in high-intensity discharge (HID) and LED lighting systems.
5. Industrial Equipment: Used in welding machines and induction heating systems.
6. HVAC Systems: For efficient power management in heating, ventilation, and air conditioning systems.
These applications benefit from the MOSFET's high voltage rating and low on-resistance, ensuring efficient and reliable performance.
Package
The IXFH20N85X is a power MOSFET that comes in a TO-247 package. The TO-247 is a standard through-hole package commonly used for high-power semiconductor devices.
