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IXFH12N120P
+NomenclatureMOSFET N-CH 1200V 12A TO247AD
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FabricantLa société ixys
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Pièce fabricant #IXFH12N120P
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Package TO-247-3
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En stock3090
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | HiPerFET™, Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.35Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 6.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 103 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 5400 pF @ 25 V |
| Power Dissipation (Max) | 543W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) |
Présentation
Description
The IXFH12N120P is a power MOSFET produced by IXYS Corporation. It is designed for high-power applications, featuring a voltage rating of 1200V and a continuous drain current of 12A. The device employs advanced MOSFET technology to provide low on-resistance and fast switching speeds, which enhance overall efficiency and performance. This makes it suitable for applications such as power converters, motor drives, and switch-mode power supplies.
The MOSFET comes in a TO-247 package, which offers robust mechanical protection and efficient thermal management, thanks to its ability to accommodate external heat sinks. The IXFH12N120P also provides a high avalanche energy capability and ruggedness, making it reliable under harsh operating conditions.
Its key features include low gate charge, high-frequency operation, and a wide safe operating area. These characteristics enable designers to optimize system performance while minimizing power losses. Overall, the IXFH12N120P is a versatile component for engineers seeking reliable solutions in high-voltage and high-current applications.
The MOSFET comes in a TO-247 package, which offers robust mechanical protection and efficient thermal management, thanks to its ability to accommodate external heat sinks. The IXFH12N120P also provides a high avalanche energy capability and ruggedness, making it reliable under harsh operating conditions.
Its key features include low gate charge, high-frequency operation, and a wide safe operating area. These characteristics enable designers to optimize system performance while minimizing power losses. Overall, the IXFH12N120P is a versatile component for engineers seeking reliable solutions in high-voltage and high-current applications.
Equivalent
The IXFH12N120P is a 1200V, 12A N-channel MOSFET designed for high voltage applications. Equivalent products may include:
1. STMicroelectronics STW12NM120
2. Infineon IPW60R120P6
3. ON Semiconductor NTP12N120
4. Vishay IRFP460
These equivalents may have differing specifications such as RDS(on), gate charge, or packaging, so it's important to verify compatibility with your specific application requirements.
1. STMicroelectronics STW12NM120
2. Infineon IPW60R120P6
3. ON Semiconductor NTP12N120
4. Vishay IRFP460
These equivalents may have differing specifications such as RDS(on), gate charge, or packaging, so it's important to verify compatibility with your specific application requirements.
Features
The IXFH12N120P is a power MOSFET designed for high-efficiency energy applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 12A.
3. R_DS(on): It offers a low on-state resistance, which improves efficiency by reducing power loss during operation.
4. Package: Typically available in a TO-247 package, providing good thermal performance.
5. Switching Speed: Designed for fast switching, suitable for high-frequency applications.
6. Thermal Management: The package and construction are optimized for efficient heat dissipation.
7. Applications: Commonly used in power supply circuits, motor control, and other high-voltage switching applications.
Overall, the IXFH12N120P is favored for its high voltage capacity and efficiency in energy conversion systems.
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 12A.
3. R_DS(on): It offers a low on-state resistance, which improves efficiency by reducing power loss during operation.
4. Package: Typically available in a TO-247 package, providing good thermal performance.
5. Switching Speed: Designed for fast switching, suitable for high-frequency applications.
6. Thermal Management: The package and construction are optimized for efficient heat dissipation.
7. Applications: Commonly used in power supply circuits, motor control, and other high-voltage switching applications.
Overall, the IXFH12N120P is favored for its high voltage capacity and efficiency in energy conversion systems.
Pinout
The IXFH12N120P is a power MOSFET manufactured by IXYS Corporation. It is designed for high-voltage and high-speed switching applications. This particular MOSFET comes in a TO-247 package and typically features three pins:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off, allowing current to flow between the drain and source or stopping it.
2. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is in the "on" state.
3. Source (S): The source is the terminal through which the current exits the MOSFET.
The IXFH12N120P is known for its high voltage rating of 1200V and continuous drain current capability of 12A, making it suitable for demanding power conversion and management applications. Its key features include fast switching, efficiency in high-speed operations, and robustness in high-voltage environments.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off, allowing current to flow between the drain and source or stopping it.
2. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is in the "on" state.
3. Source (S): The source is the terminal through which the current exits the MOSFET.
The IXFH12N120P is known for its high voltage rating of 1200V and continuous drain current capability of 12A, making it suitable for demanding power conversion and management applications. Its key features include fast switching, efficiency in high-speed operations, and robustness in high-voltage environments.
Manufacturer
The IXFH12N120P is manufactured by IXYS Corporation. IXYS is a company known for producing power semiconductors and integrated circuits. It specializes in providing high-performance products for power conversion, motor control, and renewable energy applications. Founded in 1983, IXYS focuses on developing advanced technologies that improve energy efficiency and performance in various electronic systems. The company serves a wide range of industries, including industrial, telecommunications, consumer electronics, and automotive sectors.
Application
The IXFH12N120P is a high-voltage, N-channel MOSFET suited for applications requiring efficient power management and switching. Key application areas include:
1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Employed in controlling motors in industrial and automotive applications.
3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) for energy conversion.
4. Electronic Ballasts: Applicable in lighting systems for improved energy efficiency.
5. Inductive Heating: Suitable for induction heaters due to its high-voltage handling capability.
Its high-speed switching and robustness make it ideal for applications demanding reliability and efficiency.
1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Employed in controlling motors in industrial and automotive applications.
3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) for energy conversion.
4. Electronic Ballasts: Applicable in lighting systems for improved energy efficiency.
5. Inductive Heating: Suitable for induction heaters due to its high-voltage handling capability.
Its high-speed switching and robustness make it ideal for applications demanding reliability and efficiency.
Package
The IXFH12N120P is an N-channel MOSFET featuring a TO-247 package type.
