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IRFSL3206PBF
+NomenclatureMOSFET N-CH 60V 120A TO262
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FabricantTechnologie Infineon
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Pièce fabricant #IRFSL3206PBF
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Fiche technique IRFSL3206PBF DataSheet
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En stock2904
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6540 pF @ 50 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Base Product Number | IRFSL3206 |
Présentation
Description
The IRFSL3206PBF is a N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)) of 6.5 mΩ, allowing for minimal power loss during operation. This transistor has a maximum voltage rating of 30V and a maximum continuous drain current of 90A, making it suitable for various switching and amplification applications.
The IRFSL3206PBF is packaged in a compact, surface-mount SO-8 configuration, which aids in space-saving designs and facilitates thermal management. It is characterized by fast switching speeds and high reliability, making it ideal for use in DC-DC converters, power supplies, and motor control circuits.
Additionally, the "PBF" suffix indicates that it is lead-free, aligning with environmental regulations. This MOSFET is widely utilized in consumer electronics, automotive applications, and other industrial settings where efficient power handling is critical. Overall, it offers a robust solution for engineers seeking reliable performance in compact designs.
The IRFSL3206PBF is packaged in a compact, surface-mount SO-8 configuration, which aids in space-saving designs and facilitates thermal management. It is characterized by fast switching speeds and high reliability, making it ideal for use in DC-DC converters, power supplies, and motor control circuits.
Additionally, the "PBF" suffix indicates that it is lead-free, aligning with environmental regulations. This MOSFET is widely utilized in consumer electronics, automotive applications, and other industrial settings where efficient power handling is critical. Overall, it offers a robust solution for engineers seeking reliable performance in compact designs.
Equivalent
The IRFSL3206PBF is a N-channel MOSFET. Equivalent products include the BSS138, SI2302, and IRLZ44N among others. Always verify specifications such as voltage, current rating, and Rds(on) to ensure compatibility for your specific application.
Features
The IRFSL3206PBF is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage switching.
2. Current Rating: The device can handle continuous drain currents up to 60A, allowing it to manage significant loads.
3. R_DS(on): It exhibits a low on-resistance (typically around 6.5 mΩ), which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, facilitating easy drive requirements with low-voltage logic levels.
5. Package: It comes in a compact DPAK package, enhancing thermal performance and simplifying PCB layout.
6. Fast Switching Speed: This MOSFET is optimized for high-speed applications, improving efficiency in switching circuits.
Overall, the IRFSL3206PBF is ideal for power management, DC-DC converters, and motor control applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage switching.
2. Current Rating: The device can handle continuous drain currents up to 60A, allowing it to manage significant loads.
3. R_DS(on): It exhibits a low on-resistance (typically around 6.5 mΩ), which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, facilitating easy drive requirements with low-voltage logic levels.
5. Package: It comes in a compact DPAK package, enhancing thermal performance and simplifying PCB layout.
6. Fast Switching Speed: This MOSFET is optimized for high-speed applications, improving efficiency in switching circuits.
Overall, the IRFSL3206PBF is ideal for power management, DC-DC converters, and motor control applications.
Pinout
The IRFSL3206PBF is a N-channel MOSFET with a package type of SO-8. It features eight pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET switching.
2. Drain (D) - The terminal through which the current flows when the MOSFET is on.
3. Source (S) - The terminal connected to the ground or the load; it completes the circuit.
The device is designed for applications requiring low on-resistance and fast switching, making it suitable for power management, DC-DC converters, and other high-efficiency systems. It supports a maximum continuous drain current and has a specific voltage rating, making it ideal for various power electronic applications. Always refer to the datasheet for detailed specifications and electrical characteristics.
1. Gate (G) - Controls the MOSFET switching.
2. Drain (D) - The terminal through which the current flows when the MOSFET is on.
3. Source (S) - The terminal connected to the ground or the load; it completes the circuit.
The device is designed for applications requiring low on-resistance and fast switching, making it suitable for power management, DC-DC converters, and other high-efficiency systems. It supports a maximum continuous drain current and has a specific voltage rating, making it ideal for various power electronic applications. Always refer to the datasheet for detailed specifications and electrical characteristics.
Manufacturer
The IRFSL3206PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power management, sensors, and automotive solutions. The company designs and produces a wide range of semiconductor products, including power MOSFETs, IGBTs, microcontrollers, and integrated circuits, primarily for automotive, industrial, and communication applications. Infineon is known for its focus on innovation and technology, particularly in energy efficiency and security solutions, making it a key player in the semiconductor industry.
Application
The IRFSL3206PBF is a N-channel MOSFET commonly used in various application areas, including:
1. Power Management: Efficient switching in DC-DC converters for power supplies.
2. Motor Control: Driving motors in robotics and industrial applications.
3. Load Switching: Controlling power to devices in consumer electronics.
4. Battery Management Systems: Enhancing energy efficiency in battery-powered devices.
5. Telecommunications: Used in RF amplifiers and signal modulation.
Its low on-resistance and fast switching capabilities make it suitable for these applications, improving efficiency and thermal performance.
1. Power Management: Efficient switching in DC-DC converters for power supplies.
2. Motor Control: Driving motors in robotics and industrial applications.
3. Load Switching: Controlling power to devices in consumer electronics.
4. Battery Management Systems: Enhancing energy efficiency in battery-powered devices.
5. Telecommunications: Used in RF amplifiers and signal modulation.
Its low on-resistance and fast switching capabilities make it suitable for these applications, improving efficiency and thermal performance.
Package
The IRFSL3206PBF is packaged in a surface-mount SO-8 (Small Outline Package) format.
