IRLB3034PBF

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IRLB3034PBF

+Nomenclature

MOSFET N-CH 40V 195A TO220AB

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Spécifications

Attribut Valeur
Series HEXFET®
Part Status Obsolete
Base Product Number IRLB3034
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10315 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package TO-220-3
Packaging Tube

Présentation

Description

IRLB3034PBF appears to be a course code, possibly related to a specific academic program or institution. Without specific context about the course or the institution offering it, I'll provide a generic introduction.
IRLB3034PBF is likely an advanced-level course designed to deepen students' understanding of a specialized subject within a broader discipline. The course code suggests that it might pertain to a field such as International Relations, Law, or Business (as inferred from 'IR', 'L', or 'B'). The course likely involves a combination of lectures, seminars, and practical activities to facilitate in-depth learning and application of theoretical concepts. Students may be expected to engage in critical analysis, research projects, and collaborative discussions. Evaluation could include exams, essays, or presentations. The course might also have prerequisites, requiring students to have completed introductory courses in the relevant field. For precise details, including course content, objectives, and requirements, it's best to consult the course syllabus or contact the academic department directly.

Equivalent

The IRLB3034PBF is a N-channel MOSFET. Equivalent products include:
1. STP140NF75 from STMicroelectronics.
2. NTP75N03 from ON Semiconductor.
3. FDB7030L from Fairchild Semiconductor.
4. FDP047N10 from Infineon Technologies.
These equivalents offer similar voltage, current, and RDS(on) characteristics, but it's essential to check datasheets for exact specifications and compatibility with your application.

Features

The IRLB3034PBF is a power MOSFET designed for various applications requiring efficient power management. Key features include:
1. N-Channel MOSFET: Facilitates efficient switching and amplification.
2. Voltage and Current Ratings: Operates with a maximum drain-to-source voltage of 40V and a continuous drain current of 195A at 25°C.
3. Low On-Resistance: Exhibits a low R_DS(on) of approximately 4.5mΩ, minimizing power loss and improving efficiency.
4. Fast Switching: Provides quick turn-on and turn-off times, enhancing performance in high-speed applications.
5. TO-220AB Package: Offers a robust and thermally efficient design, suitable for heat dissipation.
6. Rugged Construction: Features high avalanche energy and dV/dt capability, ensuring reliability in demanding environments.
7. Wide Range of Applications: Ideal for switching applications, including power management, motor controls, and DC-DC converters.
These features make the IRLB3034PBF suitable for use in high-performance applications where efficiency and reliability are critical.

Pinout

The IRLB3034PBF is a power MOSFET with a TO-220 package, which typically has three pins. These pins are:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET from the load.
3. Source (S): The source pin is where the current exits the MOSFET.
The IRLB3034PBF is designed for high-power applications and is commonly used for switching and amplifying electronic signals in various devices. It is known for its low on-state resistance and high current-carrying capability, making it suitable for applications like motor control, power supplies, and other circuits requiring efficient power management.

Manufacturer

The IRLB3034PBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that specializes in the design, development, and manufacturing of a wide range of semiconductor solutions. These solutions are used in various applications including automotive, industrial, consumer electronics, and security systems. Infineon is known for its expertise in power semiconductors, microcontrollers, sensors, and security solutions. The company focuses on providing innovative and efficient technologies that help address modern challenges such as energy efficiency, mobility, and security.

Application

The IRLB3034PBF is a power MOSFET commonly used in various applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Power Supply Units: Utilized in switched-mode power supplies (SMPS) for improved energy efficiency.
2. Motor Drives: Used in driving motors in industrial and consumer electronics due to its robust performance.
3. Battery Management Systems: Applied in battery protection and management circuits for better power handling.
4. Automotive Electronics: Used in automotive applications for control and power regulation.
5. DC-DC Converters: Integral in designing efficient DC-DC converter circuits.
Its low on-resistance and high current handling make it suitable for high-performance applications in these areas.

Package

The IRLB3034PBF is a power MOSFET from Infineon Technologies, typically featuring a TO-220 package. This standard package type is commonly used for power transistors, providing a good balance between cost, size, and thermal performance.

Frequently Asked Questions


Q: What is the maximum continuous drain current for the IRLB3034PBF at 25°C?
A: It can handle up to 195A (Tc) at 25°C, making it suitable for high-current DC applications.


Q: What is the typical drive voltage requirement to achieve minimum Rds(on)?
A: A gate drive voltage of 10V is required for the lowest on-resistance of 1.7mOhm, but it is also logic-level compatible at 4.5V.


Q: Is this MOSFET suitable for low-voltage motor control applications?
A: Yes, with a 40V Vdss and ultra-low Rds(on), it is ideal for battery-powered motor drives and power management.


Q: What is the maximum power dissipation rating of this device?
A: The maximum power dissipation is 375W (Tc), allowing robust thermal performance in high-power designs.


Q: Can this MOSFET be driven directly by a 3.3V microcontroller?
A: While it has a logic-level threshold, the recommended drive voltage is 4.5V or higher for full saturation; 3.3V may not fully enhance it.


Q: What is the maximum junction temperature range for the IRLB3034PBF?
A: It operates reliably from -55°C to +175°C, suitable for harsh industrial environments.