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IRLML5203TRPBF
+NomenclatureMOSFET P-CH 30V 3A MICRO3/SOT23
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FabricantTechnologie Infineon
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Pièce fabricant #IRLML5203TRPBF
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Fiche technique IRLML5203TRPBF DataSheet
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En stock4490
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| PartStatus | Last Time Buy |
| BaseProductNumber | IRLML5203 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 98mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 1.25W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Présentation
Equivalent
- Si2301DS (Vishay)
- DMG2305UX (Diodes Inc.)
- FDC5612P (Fairchild/ON Semi)
- BSS84 (Infineon/NXP)
These are similar in specs (P-channel, ~30V, SOT-23 package) but verify exact parameters (Rds(on), current rating) for your application. Always check datasheets for compatibility.
Pinout
1. Gate (G) – Controls the switching.
2. Drain (D) – Connected to the load.
3. Source (S) – Connected to the power supply.
Key Features:
- Voltage Rating: -30V
- Current Rating: -5.3A (continuous)
- Low On-Resistance (RDS(on)): ~22mΩ @ VGS = -10V
- Logic-Level Gate Drive (works with low-voltage control signals).
Commonly used in power switching, load control, and DC-DC conversion.
Application
1. Power Management – Switching and load switching in portable devices.
2. Battery Protection – Reverse polarity and discharge control.
3. DC-DC Converters – Efficient power conversion in low-voltage applications.
4. Motor Control – Small motor drivers in consumer electronics.
5. LED Drivers – Dimming and power regulation for LEDs.
Its compact SOT-23 package and low on-resistance make it ideal for space-constrained, low-power applications.
Package
Frequently Asked Questions
Q: What is the maximum drain current for this P-Channel MOSFET?
A: The IRLML5203TRPBF can handle a continuous drain current (Id) of 3A at 25°C ambient temperature.
Q: What is the typical gate threshold voltage for this device?
A: The maximum gate threshold voltage (Vgs(th)) is 2.5V at a drain current of 250µA, ensuring logic-level drive capability.
Q: Can this MOSFET be driven directly by a 3.3V microcontroller?
A: Yes, but it is optimized for 4.5V to 10V gate drive. At 3.3V, conduction losses may increase due to higher Rds(on).
Q: What is the maximum power dissipation of the IRLML5203TRPBF?
A: The maximum power dissipation is 1.25W at ambient temperature (Ta), suitable for low-power surface-mount designs.
Q: What package type is used for this MOSFET?
A: It is housed in a Micro3/SOT-23 surface-mount package (TO-236-3, SC-59, SOT-23-3), ideal for compact PCB layouts.
Q: Does this component support high-frequency switching applications?
A: Yes, with a typical gate charge (Qg) of 14nC at 10V and input capacitance of 510pF, it is suitable for moderate-speed switching.