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IRLR2908TRPBF
+NomenclatureMOSFET N-CH 80V 30A DPAK
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FabricantTechnologie Infineon
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Pièce fabricant #IRLR2908TRPBF
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Fiche technique IRLR2908TRPBF DataSheet
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| Part Status | Active |
| Base Product Number | IRLR2908 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V |
| Power Dissipation (Max) | 120W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Présentation
Description
- Low On-Resistance (RDS(on)): 3.5 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Up to 195A (pulsed) and 98A (continuous).
- Fast Switching: Optimized for DC-DC converters, motor drives, and power management.
- Voltage Rating: 30V drain-to-source (VDS), suitable for 12V/24V systems.
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS), compatible with microcontrollers.
- TO-252 (DPAK) Package: Compact, surface-mount design with good thermal performance.
Ideal for battery protection, load switches, and automotive applications due to its robustness and efficiency. Always refer to the datasheet for detailed specs and thermal considerations.
Equivalent
- IRLR2905ZPBF (similar specs, TO-262)
- IRL1004PBF (30V, 130A, TO-220)
- STP80NF55-06 (55V, 80A, TO-220)
- AOD4184 (40V, 84A, TO-252)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 80V (Drain-to-Source, VDS)
- Current Rating: 42A (Continuous Drain, ID at 25°C)
- Low On-Resistance (RDS(on)): 8.0mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Gate Drive Voltage (VGS): ±20V (max), typically 10V for full enhancement
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-252 (DPAK), surface-mount design
- Low Gate Charge (Qg): Enhances switching performance
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current terminal).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDS: 80V
- ID: 42A (continuous)
- Low RDS(on): 14mΩ (max at VGS=10V)
- Logic-Level Gate Drive (fully enhanced at 4.5V)
Commonly used in power switching, motor control, and DC-DC converters.
Application
1. Switching Power Supplies – Efficient DC-DC conversion.
2. Motor Control – Drives motors in robotics, automotive, and industrial systems.
3. Load Switching – Controls high-current loads in power management circuits.
4. Battery Management – Used in protection and charging circuits.
5. Inverters & Converters – Supports energy conversion in solar and UPS systems.
Its low on-resistance (RDS(on)) and high current handling (up to 44A) make it ideal for high-efficiency, high-power applications.