IPB65R110CFDA

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IPB65R110CFDA

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Spécifications

Attribut Valeur
Technology Si
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS CFDA
Factory Pack Quantity:Factory Pack Quantity 1000
Subcategory Transistors
Part # Aliases IPB65R11CFDAXT SP000896402 IPB65R110CFDAATMA1
Mounting Style SMD/SMT
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Height 4.4 mm
Length 10 mm
Width 9.25 mm
Unit Weight 4 g
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 31.2 A
Rds On - Drain-Source Resistance 99 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 118 nC
Pd - Power Dissipation 277.8 W
Channel Mode Enhancement
Fall Time 6 ns
Rise Time 11 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 68 ns
Typical Turn-On Delay Time 16 ns
Qualification AEC-Q100
REACH - SVHC Details
Package/Case D2PAK-3 (TO-263-3)

Présentation

Description

The IPB65R110CFDA is a high-performance N-channel MOSFET designed for applications requiring efficient power management. With a breakdown voltage of 650V and a maximum continuous drain current of 110A, this device is suitable for medium to high voltage applications, including power supplies, converters, and motor drives.
Key features include low on-resistance (RDS(on)) of approximately 110 mΩ, which minimizes power loss and improves efficiency. The device also boasts fast switching capabilities, making it ideal for high-frequency applications. The package typically used is TO-220, allowing for effective heat dissipation.
This MOSFET is well-regarded for its reliability and thermal performance, enhancing the overall performance of electronic circuits. It is commonly used in industrial, automotive, and renewable energy sectors, where robust performance under demanding conditions is crucial.
Overall, the IPB65R110CFDA is a versatile component for engineers looking to optimize power management in their designs.

Equivalent

The IPB65R110CFDA is an N-channel MOSFET with a 110V, 65A rating. Equivalent products include the IRF3205, STP65NF75, and BUK9YB65-100. Ensure to check specifications like Rds(on), gate threshold voltage, and packaging to confirm compatibility for your application.

Features

The IPB65R110CFDA is a high-performance N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
- Current Rating: The continuous drain current (I_D) is up to 110A, enabling it to handle substantial power loads.
- Low R_DS(on): It boasts a low on-resistance (approximately 0.11 ohms at V_GS = 10V), which reduces conduction losses and improves efficiency.
- Fast Switching: The device is designed for fast switching applications, enhancing performance in converters and inverters.
- Thermal Performance: It has a robust thermal management capability with a maximum junction temperature of 175°C.
- Package Type: Offered in a TO-220 package, facilitating easy heat dissipation and mounting.
These features make the IPB65R110CFDA ideal for applications like power supplies, motor drives, and automotive systems.

Pinout

The IPB65R110CFDA is a power MOSFET from Infineon, specifically designed for high-performance power applications. It features a total of 6 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's switch operation.
2. Drain (D): Connects to the load and is where the output current flows.
3. Source (S): Ground reference for the MOSFET; provides a return path for the current.
4. Gate (G): Another gate pin for redundancy or improved drive capabilities.
The device is designed for use in applications like power supplies, converters, and motor drives, providing efficient switching performance and thermal management. It operates with a maximum drain-source voltage of 65V and has a continuous drain current rating of 110A.

Manufacturer

The IPB65R110CFDA is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the design and production of a wide range of semiconductor products, including power semiconductor devices, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, communication, and consumer electronics.
Infineon is known for its innovations in power management and energy efficiency solutions, particularly in applications like electric vehicles, renewable energy systems, and industrial automation. The IPB65R110CFDA itself is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high efficiency and performance in power electronic applications. Infineon is recognized for its commitment to advanced technology and sustainability, making significant contributions to the development of smart and green technologies.

Application

The IPB65R110CFDA is a N-channel MOSFET primarily used in power applications due to its high efficiency and fast switching capabilities. Its applications include:
1. DC-DC Converters: Used for efficient power conversion in power supplies.
2. Motor Control: Employed in drive circuits for electric motors.
3. Switching Regulators: Utilized in various voltage regulation solutions.
4. Inverters: Applied in renewable energy systems like solar inverters.
5. Battery Management Systems: Used in devices to manage battery charging and discharging.
These applications benefit from the MOSFET's low on-resistance and high breakdown voltage.

Package

The IPB65R110CFDA is typically packaged in a DPAK (TO-252) package, which is a surface-mount package commonly used for power MOSFETs. This package type offers efficient thermal performance and is suitable for various electronic applications.

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