2N7002K-T1-GE3 vs 2N7002K-T1-E3

Cette comparaison détaillée des composants 2N7002K-T1-GE3 et 2N7002K-T1-E3 vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-T1-E3 and 2N7002K-T1-GE3 are functionally equivalent N-channel MOSFETs sharing identical electrical characteristics, package footprint, and pin configuration. The GE3 suffix denotes a halogen-free, RoHS-compliant molding compound, making the GE3 variant the preferred choice for environmentally regulated designs while remaining a direct drop-in replacement for the E3 version.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Environmental Compliance High match

Review the critical differences →

Parts at a glance

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter 2N7002K-T1-E3 2N7002K-T1-GE3 Why it matters
Manufacturer Vishay Siliconix Vishay Siliconix Same manufacturer ensures consistent process technology and quality standards.
Transistor Type N-Channel MOSFET N-Channel MOSFET Both are N-channel enhancement-mode MOSFETs, ensuring functional interchangeability in switching circuits.
Drain-Source Voltage (Vds) 60 V 60 V Maximum voltage the device can block; must meet or exceed circuit voltage requirements.
Continuous Drain Current (Id) 300 mA 300 mA Determines the maximum load current the MOSFET can handle continuously.
Rds(on) at Vgs = 10 V 1.2 Ω 1.2 Ω Lower on-resistance reduces conduction losses and heat dissipation during operation.
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.5 V 1.0 V to 2.5 V Defines the gate voltage needed to turn on the device; critical for logic-level compatibility.
Package / Case SOT-23 (TO-236) SOT-23 (TO-236) Same footprint ensures drop-in PCB compatibility without layout changes.
Power Dissipation (Pd) 350 mW 350 mW Maximum power the package can dissipate; affects thermal design and reliability.
Packaging / Ordering Suffix Tape and Reel, Lead-Free (E3 = RoHS compliant, matte tin) Tape and Reel, Lead-Free (GE3 = RoHS compliant, green/lead-free) Different suffix codes indicate different lead-frame/plating or green-molding compound formulations, which may affect solderability and environmental compliance documentation.
Operating Junction Temperature -55 °C to +150 °C -55 °C to +150 °C Defines the thermal operating window for reliable performance in harsh environments.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K-T1-GE3 2N7002K-T1-E3
Series TrenchFET® TrenchFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 30 pF @ 25 V 30 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount

Frequently asked questions

What is the difference between 2N7002K-T1-E3 and 2N7002K-T1-GE3?

The primary difference is the packaging designation: the -E3 suffix indicates lead-free (Pb-free) RoHS-compliant packaging, while the -GE3 suffix indicates lead-free, halogen-free, and RoHS-compliant packaging. Both are otherwise the same 2N7002K N-channel MOSFET die in the SOT-23 package.

Are 2N7002K-T1-E3 and 2N7002K-T1-GE3 electrically identical?

Yes. Both variants share the same electrical specifications, including drain-source voltage (60 V), continuous drain current (300 mA at 25 °C), and RDS(on) characteristics, because they use the same silicon die and package.

Can 2N7002K-T1-E3 and 2N7002K-T1-GE3 be used interchangeably?

Yes, they are functionally interchangeable in most applications. The only difference is the environmental compliance level of the packaging materials, so substitution is acceptable unless a specific halogen-free requirement mandates the -GE3 variant.

What is the drain-source voltage rating of these MOSFETs?

Both 2N7002K-T1-E3 and 2N7002K-T1-GE3 have a maximum drain-source voltage (VDS) rating of 60 V.

What is the continuous drain current rating for these devices?

The continuous drain current (ID) is 300 mA at a case temperature of 25 °C for both variants.

What package do 2N7002K-T1-E3 and 2N7002K-T1-GE3 use?

Both devices are supplied in the SOT-23 (TO-236) surface-mount package.

Do these MOSFETs meet RoHS requirements?

Yes. Both the -E3 and -GE3 versions are RoHS-compliant. The -GE3 version additionally meets halogen-free requirements.

What is the typical RDS(on) for these MOSFETs?

The typical on-resistance RDS(on) is 1.2 Ω at VGS = 10 V and 1.6 Ω at VGS = 4.5 V, for both variants.

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