2N7002KT1G vs 2N7002K-T1-GE3

Cette comparaison détaillée des composants 2N7002KT1G et 2N7002K-T1-GE3 vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-T1-GE3 and 2N7002KT1G are functionally equivalent N-channel MOSFETs sharing identical voltage, current, and package ratings, making them suitable drop-in replacements for most designs. Minor differences in gate threshold voltage and RDS(on) specifications should be validated against circuit tolerances before substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Demande de devis Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002KT1G 2N7002K-T1-GE3
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 320mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 1.6Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.7 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 24.5 pF @ 20 V 30 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchFET®
Compare Demande de devis