2N7002DW vs 2N7002CK

Cette comparaison détaillée des composants 2N7002DW et 2N7002CK vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002CK are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002-class threshold and RDS(on) characteristics, and SOT-363 surface-mount footprint, making the 2N7002CK a viable functional substitute for the 2N7002DW in most low-power switching and level-shifting applications. Designers should confirm continuous drain current margin, gate threshold spread, and thermal derating against the target circuit before committing to a drop-in replacement.

Channel Configuration High match
Drain-Source Voltage Rating High match
Continuous Drain Current Validation required
Package and Pinout Validation required

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002DW 2N7002CK
Part Status Active Active
Base Product Number 2N7002 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 60V -
Current - Continuous Drain (Id) @ 25°C 115mA -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V -
Vgs(th) (Max) @ Id 2V @ 250µA -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V -
Power - Max 200mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Packaging Cut Tape (CT), Tape & Reel (TR) -