2N7002E vs 2N7002DW

Cette comparaison détaillée des composants 2N7002E et 2N7002DW vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002E are both 60 V logic-level N-channel MOSFETs sharing the same SOT-363 (SC-88) package and similar RDS(on) characteristics, making the 2N7002DW a viable functional replacement candidate for the 2N7002E in most low-power switching applications. However, the 2N7002DW integrates two electrically isolated MOSFETs in a single package, whereas the 2N7002E is a single-device part, so designers must account for the dual-channel configuration and verify continuous current and thermal derating against the target circuit requirements before substituting.

Channel Configuration High match
Package Type High match
Continuous Drain Current Validation required
Drain-Source Voltage Validation required

Review the critical differences →

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Demande de devis Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002DW
Part Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V -
Power Dissipation (Max) 350mW (Ta) -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - 2N7002
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain (Id) @ 25°C - 115mA
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds - 50pF @ 25V
Power - Max - 200mW
Packaging - Cut Tape (CT), Tape & Reel (TR)
Compare Demande de devis