IXFP5N100PM

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IXFP5N100PM

+Nomenclature

MOSFET N-CH 1000V 2.3A TO220

  • FabricantLa société ixys

  • Pièce fabricant #IXFP5N100PM

  • En stock285

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Spécifications

Attribut Valeur
Supplier IXYS
Package / Case Tube
Series HiPerFET™, Polar
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 2.3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2.8Ohm @ 2.5A, 10V
Vgs(th)(Max) @ Id 6V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 33.4 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1830 pF @ 25 V
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab