Images à titre indicatif uniquement
IRFH7084TRPBF
+NomenclatureMOSFET N-CH 40V 100A 8PQFN
-
FabricantTechnologie Infineon
-
Pièce fabricant #IRFH7084TRPBF
-
Fiche technique IRFH7084TRPBF DataSheet
-
Package TDSON-8
-
En stock3343
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.25mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.9V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 190 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6560 pF @ 25 V |
| PowerDissipation(Max) | 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Présentation
Description
### Key Features:
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) at 10V, reducing conduction losses.
- High Current Handling: Up to 120A continuous drain current.
- Fast Switching: Optimized for high-frequency operation.
- Robust Packaging: PQFN 5x6mm, improving thermal performance.
- Low Gate Charge (QG): Enhances efficiency in switching applications.
### Applications:
- Synchronous rectification in VRMs (Voltage Regulator Modules).
- Server/Telecom power supplies.
- Battery management systems.
This MOSFET is ideal for high-current, high-efficiency designs requiring minimal power loss and compact footprint.
Equivalent
- IRFH7084PBF (same specs, different packaging)
- IRFHM834 (similar specs, higher current rating)
- IRFH5004TRPBF (comparable, lower Rds(on))
- SiR458DP (Vishay alternative)
- BSC028N04LS (Infineon alternative)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 40V
- Current Rating: 180A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 1.3mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PQFN 5x6mm (PowerQFN), compact and thermally efficient
- Gate Charge (Qg): 120nC (typical) for reduced switching losses
- Avalanche Energy Rated: Robust against inductive spikes
- Logic-Level Gate Drive (VGS=4.5V): Compatible with 5V controllers
Ideal for DC-DC converters, motor drives, and high-current power systems.
Application
1. Power Supplies – Efficient DC-DC converters and voltage regulation.
2. Motor Control – Drives for brushed/brushless motors in automotive and industrial systems.
3. LED Lighting – High-efficiency drivers for solid-state lighting.
4. Battery Management – Protection and switching in portable devices and EVs.
5. RF Amplifiers – Envelope tracking in telecom infrastructure.
Its low on-resistance (RDS(on)) and fast switching make it ideal for high-frequency, high-efficiency applications.