Images à titre indicatif uniquement
BSG0813NDIATMA1
+NomenclatureMOSFET 2N-CH 25V 19A/33A TISON8
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FabricantTechnologie Infineon
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Pièce fabricant #BSG0813NDIATMA1
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Fiche technique BSG0813NDIATMA1 DataSheet
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Package TDFN-8
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En stock5827
365 Garantie qualité 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain(Id) @ 25°C | 19A, 33A |
| Rds On(Max) @ Id Vgs | 3mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 1100pF @ 12V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
