Images à titre indicatif uniquement
IRF3575DTRPBF
+NomenclatureMOSFET 2N-CH 25V 303A PQFN
-
FabricantTechnologie Infineon
-
Pièce fabricant #IRF3575DTRPBF
-
Package WFQFN-32
-
En stock2207
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain(Id) @ 25°C | 303A (Tc) |
| Mounting Type | Surface Mount |
Présentation
Description
- Voltage Rating: 75V
- Current Rating: 35A (continuous)
- Low On-Resistance (RDS(on)): 9.3mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-speed performance
- Package: D²PAK (TO-263), surface-mount for efficient thermal dissipation
Commonly used in:
- DC-DC converters
- Motor drives
- Power supplies
- Battery management
Its low conduction losses and high current capability make it suitable for demanding applications. The DTRPBF suffix indicates it’s supplied in tape-and-reel packaging for automated assembly.
For detailed specs, refer to the datasheet.
Equivalent
- IRF3710PbF (100V, 57A)
- IRFB3077PbF (75V, 210A)
- IRFB3206PbF (60V, 180A)
- AUIRF3710 (100V, 57A)
- STP160N75F3 (75V, 160A)
Check datasheets for exact specs and pin compatibility. Alternatives may vary in current, voltage, or package.
Features
- Voltage Rating: 75V
- Current Rating: 120A (pulsed) / 62A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Gate Charge (Qg): 110nC (typical)
- Avalanche Rated: Robust against inductive spikes
- Package: D2PAK (TO-263) for efficient heat dissipation
- Logic-Level Gate Drive: Compatible with 5V drive (but performs best at 10V)
Ideal for power switching, motor control, and DC-DC converters due to its high efficiency and low conduction losses.
Pinout
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-Channel MOSFET
- VDS: 75V
- ID: 42A (continuous)
- Low RDS(on): 9.3mΩ (max at VGS=10V)
Used in power switching, DC-DC converters, and motor control.