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IRF9358TRPBF
+NomenclatureMOSFET 2P-CH 30V 9.2A 8SOIC
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FabricantTechnologie Infineon
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Pièce fabricant #IRF9358TRPBF
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Fiche technique IRF9358TRPBF DataSheet
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Package SO-8
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En stock6157
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 9.2A |
| Rds On(Max) @ Id Vgs | 16.3mOhm @ 9.2A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 38nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1740pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
Key features of the IRF9358TRPBF include:
- It has a maximum drain-source voltage (V_ds) of -55V.
- The maximum continuous drain current (I_d) is -10A.
- The MOSFET provides low on-resistance (R_ds(on)) of approximately 0.225 ohms, enhancing efficiency.
- It comes in a TO-252 (D-PAK) surface-mount package, providing a compact design ideal for space-constrained applications.
- It is designed for use in environments where low gate drive voltage is important, with a gate threshold voltage (V_gs) around -4V.
This component is widely used in automotive, industrial, and consumer electronics due to its robustness and efficiency in power handling.
Equivalent
1. IRF9Z34N
2. FQP27P06
3. SI9435BDY
4. STP9P20
These alternatives have similar electrical characteristics but always verify parameters like voltage, current, and package compatibility for your specific application.
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of -55V and a continuous drain current (I_D) of up to -7.8A.
2. R_DS(on): Offers low on-state resistance (R_DS(on)), ensuring efficient current conduction with minimal power loss.
3. Package Type: Available in a surface-mount D-Pak (TO-252) package, allowing for ease of installation in compact circuit designs.
4. Temperature Range: Operates within a wide temperature range, ensuring reliability under various environmental conditions.
5. Switching Speed: Provides fast switching characteristics, suitable for high-speed applications.
6. Thermal Performance: Designed with good thermal management properties to maintain performance under load.
7. Lead-Free: Complies with RoHS standards, making it environmentally friendly with lead-free construction.
These features make the IRF9358TRPBF suitable for applications like power management, load switching, and motor control in both consumer and industrial electronics.
Pinout
Functions:
- Gate (G): This terminal controls the ON/OFF state of the MOSFET. A voltage applied to the gate regulates the flow of current between the drain and source.
- Drain (D): Current flows from the source to the drain when the MOSFET is in the ON state. The drain is the terminal that receives the current from the load.
- Source (S): This terminal is the entry point for electrical current, which flows to the drain when the MOSFET is activated.
The IRF9358TRPBF is commonly used for switching applications and power management in various electronic devices.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and voltage regulators for efficient power distribution.
2. Load Switching: Employed in electronic devices for controlling and switching loads.
3. Motor Control: Used in motor driver circuits for controlling small to medium-sized motors.
4. LED Drivers: Implements efficient current control in LED lighting systems.
5. Battery Protection: Integral in battery management systems for over-current and short-circuit protection.
These applications leverage the MOSFET's low on-resistance and high-speed switching characteristics.