2N7002ET1G vs 2N7002E-T1-E3

Cette comparaison détaillée des composants 2N7002ET1G et 2N7002E-T1-E3 vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002E-T1-E3 are functionally equivalent N-channel small-signal MOSFETs sharing the same SOT-23 package, 60 V drain-source voltage rating, and 300 mA continuous drain current capability. Both parts are suitable for low-side switching, level shifting, and small-signal amplification applications. Designers may treat them as interchangeable in most circuits, though final validation against the specific manufacturer datasheet is recommended to confirm gate threshold, on-resistance, and thermal characteristics for the target application.

Package Type High match
Drain-Source Voltage Rating High match
Continuous Drain Current High match
On-Resistance and Gate Threshold Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002ET1G 2N7002E-T1-E3
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 260mA (Ta) 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 2.5Ohm @ 240mA, 10V 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.81 nC @ 5 V 0.6 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 26.7 pF @ 25 V 21 pF @ 5 V
Power Dissipation (Max) 300mW (Tj) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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