2N7002ET1G vs 2N7002CK

Cette comparaison détaillée des composants 2N7002ET1G et 2N7002CK vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002CK are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional substitute for the 2N7002ET1G in most low-power switching applications. Designers should verify gate threshold, on-resistance, and thermal characteristics against their specific circuit requirements before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
On-Resistance Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002ET1G 2N7002CK
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 260mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 2.5Ohm @ 240mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.81 nC @ 5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 26.7 pF @ 25 V -
Power Dissipation (Max) 300mW (Tj) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
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