2N7002,215 vs 2N7002ET1G

Cette comparaison détaillée des composants 2N7002,215 et 2N7002ET1G vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002,215 are functionally equivalent N-channel enhancement-mode MOSFETs with matching voltage, current, and package ratings, making them suitable drop-in replacements for most low-power switching and level-shifting applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before finalizing the substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Static Drain-Source On-Resistance Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002ET1G
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 260mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 26.7 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 300mW (Tj)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.81 nC @ 5 V
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