2N7002,215 vs 2N7002CK

Cette comparaison détaillée des composants 2N7002,215 et 2N7002CK vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002CK is a viable functional replacement candidate for the 2N7002,215 in most low-power switching applications, with identical drain-source voltage, continuous drain current, and package footprint. Designers should validate gate threshold voltage tolerance and gate charge characteristics against the target circuit's drive and switching-speed requirements before committing to production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002CK
Part Status Active Active
Series TrenchMOS™ -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 10V -
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 250µA -
Vgs(Max) ±30V -
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V -
Power Dissipation (Max) 830mW (Ta) -
Operating Temperature -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount -