2N7002L vs 2N7002,215

Cette comparaison détaillée des composants 2N7002L et 2N7002,215 vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002,215 and 2N7002L are functionally equivalent N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 300 mA continuous drain current, SOT-23 package, and RDS(on) characteristics. Both are suitable for low-side switching, level shifting, and small-signal load control. Designers may treat them as interchangeable in most applications, though gate threshold voltage spread and input capacitance should be validated against the specific drive circuit.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Demande de devis Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002L 2N7002,215
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 115mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 10V
Rds On(Max) @ Id Vgs 7.5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 50 pF @ 10 V
Power Dissipation (Max) 200mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchMOS™
Compare Demande de devis