2N7002CK vs 2N7002V

Cette comparaison détaillée des composants 2N7002CK et 2N7002V vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002CK and 2N7002V are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional substitute for the 2N7002V in most low-power switching applications. However, designers should verify gate threshold voltage, on-resistance, and input capacitance tolerances against the target circuit's drive and timing requirements before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
On-Resistance Validation required
Gate Threshold Voltage Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002CK 2N7002V
Supplier - Rochester Electronics, LLC
Part Status Active Active
FET Type - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) - 60V
Current - Continuous Drain(Id) @ 25°C - 280mA
Rds On(Max) @ Id Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th)(Max) @ Id - 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds - 50pF @ 25V
Power - Max - 250mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
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