UCC27211DR

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UCC27211DR

+Nomenclature

IC GATE DRVR HALF-BRIDGE 8SOIC

  • FabricantTexas Instruments

  • Pièce fabricant #UCC27211DR

  • Package SOIC (D)-8

  • En stock2096

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType N-Channel MOSFET
Voltage-Supply 8V ~ 17V
LogicVoltage-VILVIH 1.3V, 2.7V
Current-PeakOutput(SourceSink) 4A, 4A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 120 V
Rise/FallTime(Typ) 7.2ns, 5.5ns
OperatingTemperature -40°C ~ 140°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Présentation

Description

The UCC27211DR is a high-frequency, N-channel MOSFET driver integrated circuit from Texas Instruments. It is designed to drive high-side and low-side N-channel MOSFETs in a half-bridge configuration, which is commonly used in applications such as motor drives, power supplies, and DC-DC converters. The device operates with a supply voltage range of 8 to 17 volts and is capable of providing high peak current capability, which ensures fast switching of the MOSFETs and efficient energy conversion.
Key features of the UCC27211DR include a bootstrapped high-side driver that allows for high-side operation up to 120 V, fast propagation delay times, and high drive current capability (up to 4 A). The device also offers protection features such as under-voltage lockout (UVLO) for both high-side and low-side drivers, ensuring reliable operation under various conditions. Its small SOIC-8 package size makes it suitable for space-constrained applications. Overall, the UCC27211DR is a robust and efficient solution for driving high-speed and high-power switching applications.

Equivalent

Equivalent products to the UCC27211DR chip, which is a high-frequency, high-side and low-side driver from Texas Instruments, include the IR2110 from Infineon Technologies, FAN7390 from ON Semiconductor, and MIC4100 from Microchip Technology. These alternatives offer similar functionality for driving MOSFETs in half-bridge configurations and are used in various power electronics applications. Always check the datasheets for compatibility in terms of voltage ratings, switching frequencies, and pin configurations.

Features

The UCC27211DR is a high-frequency N-channel MOSFET driver designed for efficient driving of power MOSFETs and IGBTs in high-performance power conversion applications. Key features include:
1. High-Side/Low-Side Driver: It includes a high-side and a low-side driver, suitable for half-bridge and full-bridge configurations.
2. Peak Output Current: Offers a high peak output current of 4 A to enable fast switching of large MOSFETs.
3. Wide VDD Range: Operates with a wide supply voltage range from 8 V to 17 V, enhancing compatibility with various power systems.
4. Bootstrap Operation: Supports bootstrap operation for the high-side driver, simplifying high-side drive design.
5. UVLO Protection: Incorporates Under-Voltage Lockout (UVLO) protection to ensure safe operation under low supply voltage conditions.
6. Fast Propagation Delay: Delivers fast switching with a propagation delay of typically 20 ns, enhancing efficiency in high-frequency applications.
7. TTL/CMOS Compatible Inputs: Compatible with TTL and CMOS logic levels, ensuring easy interfacing with control signals.
8. Robust Design: Designed for robust operation with high dv/dt immunity.
This driver is ideal for applications such as motor drives, DC-DC converters, and switched-mode power supplies.

Pinout

The UCC27211DR is a high-frequency gate driver IC manufactured by Texas Instruments. It is typically used to drive high-side and low-side N-channel MOSFETs in half-bridge configurations.
The UCC27211DR comes in an 8-pin SOIC package. Here is a brief overview of its pin functions:
1. HB (Pin 1): High-side bootstrap supply.
2. HO (Pin 2): High-side gate drive output.
3. HS (Pin 3): High-side source connection. Connect to the high-side MOSFET source.
4. HI (Pin 4): High-side input. Controls the high-side MOSFET.
5. LI (Pin 5): Low-side input. Controls the low-side MOSFET.
6. VSS (Pin 6): Ground reference for the IC.
7. LO (Pin 7): Low-side gate drive output.
8. VDD (Pin 8): Supply voltage for the IC, typically ranging from 8V to 17V.
This IC is designed for high-speed switching applications and provides excellent propagation delay matching, which is crucial in maintaining efficient operation in power conversion systems.

Manufacturer

The UCC27211DR is manufactured by Texas Instruments. Texas Instruments, often abbreviated as TI, is an American technology company that designs and manufactures semiconductors and various integrated circuits. They are one of the largest global suppliers of analog electronics and embedded processors. TI's products are widely used in applications across various industries, including consumer electronics, automotive, industrial, and communications equipment. Founded in 1930 and headquartered in Dallas, Texas, the company has a long history of innovation in electronics and plays a significant role in the semiconductor market.

Application

The UCC27211DR is a high-frequency, high-side and low-side gate driver capable of driving N-channel MOSFETs, commonly used in power supply and motor control applications. It is suitable for applications such as synchronous buck converters, half-bridge and full-bridge converters, and two-switch forward converters. The device's fast switching capabilities make it ideal for high-efficiency power management tasks, including DC-DC converters, motor drivers, and industrial power supplies. Its robust performance in high-frequency environments also makes it suitable for telecom and server power supplies, as well as renewable energy systems like solar inverters.

Package

The UCC27211DR is a high-frequency N-channel MOSFET driver IC manufactured by Texas Instruments. It comes in an 8-pin SOIC (Small Outline Integrated Circuit) package, designated by the suffix "DR." This package type is compact and suitable for surface-mount applications, offering reliable performance for high-speed switching applications.

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