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LM5111-1M
+NomenclatureIC GATE DRVR LOW-SIDE 8SOIC
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FabricantTexas Instruments
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Pièce fabricant #LM5111-1M
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Package 8-SOIC
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En stock3655
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| ProductStatus | Obsolete |
| DrivenConfiguration | Low-Side |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 3.5V ~ 14V |
| LogicVoltage-VILVIH | 0.8V, 2.2V |
| Current-PeakOutput(SourceSink) | 3A, 5A |
| InputType | Non-Inverting |
| Rise/FallTime(Typ) | 14ns, 12ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Présentation
Description
The LM5111-1M operates over a wide supply voltage range from 3.5V to 14V, making it versatile for various circuit configurations. Its low propagation delay and fast rise and fall times enable precise timing in switching applications. With its robust design, it offers protection features such as undervoltage lockout (UVLO) to prevent erroneous operation during low supply voltage conditions.
Typical applications for the LM5111-1M include power supply circuits, motor control, and renewable energy systems. Its compact package and high-performance characteristics make it suitable for space-constrained layouts and designs requiring efficient thermal management. The LM5111-1M is part of Texas Instruments' extensive portfolio of power management integrated circuits.
Equivalent
1. UCC27324 by Texas Instruments - Offers similar functionality and performance.
2. MIC4427 by Microchip Technology - Known for driving MOSFETs and IGBTs efficiently.
3. FAN3100 by ON Semiconductor - Provides high current drive capability.
4. TC4427 by Microchip Technology - Another alternative with comparable specifications.
Ensure compatibility with specific application requirements before substitution.
Features
1. High-Speed Operation: Capable of driving MOSFETs with fast rise and fall times, typically within 20 ns, enabling efficient high-frequency switching.
2. Output Drive Capability: Provides peak output currents of 5 A, ensuring the rapid charging and discharging of MOSFET gates.
3. Wide Supply Voltage Range: Operates over a wide input voltage range from 4.5 V to 18 V, offering flexibility in various applications.
4. Inverting and Non-Inverting Outputs: Includes both inverting and non-inverting outputs, allowing versatility in driving configurations.
5. Low Propagation Delay: Features a low propagation delay, typically around 25 ns, improving system response time.
6. Under-Voltage Lockout (UVLO): Protects the device by ensuring it only operates when the supply voltage is above a certain threshold.
7. Thermal Protection: Built-in thermal shutdown feature prevents damage from overheating.
8. Compact Package: Available in a small SOIC-8 or WSON package, facilitating easy integration into space-constrained designs.
These features make the LM5111-1M suitable for use in DC-DC converters, motor drives, and other power management applications where efficient MOSFET driving is essential.
Pinout
1. IN1 (Pin 1): Input signal for the first driver.
2. VEE (Pin 2): Ground reference for the driver.
3. OUT1 (Pin 3): Output for the first driver.
4. VDD (Pin 4): Supply voltage for the IC.
5. IN2 (Pin 5): Input signal for the second driver.
6. GND (Pin 6): Ground connection.
7. OUT2 (Pin 7): Output for the second driver.
8. NC (Pin 8): No connection.
The LM5111-1M is used to drive high-speed switching of MOSFET transistors, facilitating efficient power management in various applications like DC-DC converters and motor drives. It provides strong drive capability with a low output resistance, ensuring fast rise and fall times.