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TPH3208LS
+NomenclatureGANFET N-CH 650V 20A 3PQFN
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FabricantTransphorm
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Pièce fabricant #TPH3208LS
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Fiche technique TPH3208LS DataSheet
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Spécifications
| Attribut | Valeur |
| Supplier | Transphorm |
| Package / Case | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 130mOhm @ 13A, 8V |
| Vgs(th)(Max) @ Id | 2.6V @ 300µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 8 V |
| Vgs(Max) | ±18V |
| Input Capacitance(Ciss)(Max) @ Vds | 760 pF @ 400 V |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PQFN (8x8) |
