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TP65H070LSG
+NomenclatureGANFET N-CH 650V 25A 3PQFN
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FabricantTransphorm
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Pièce fabricant #TP65H070LSG
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En stock8760
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Transphorm |
| Package / Case | Tube |
| Series | TP65H070L |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 4.8V @ 700µA |
| Gate Charge(Qg)(Max) @ Vgs | 9.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 600 pF @ 400 V |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PQFN (8x8) |
