STP33N60M2

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STP33N60M2

+Nomenclature

MOSFET N-CH 600V 26A TO220

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Spécifications

Attribut Valeur
Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 26A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 125mOhm @ 13A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 45.5 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1781 pF @ 100 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Présentation

Description

The STP33N60M2 is an N-channel Power MOSFET designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 600V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): 0.09Ω (max)
- Fast Switching: Optimized for reduced switching losses
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
It is housed in a TO-247 package, ensuring good thermal performance. Common applications include:
- Switch-mode power supplies (SMPS)
- Motor drives
- Inverters
- Industrial power systems
The MOSFET integrates a fast body diode, improving efficiency in hard-switching circuits. Its high voltage and current ratings make it suitable for demanding power electronics designs.
For detailed specs, refer to the datasheet.

Features

The STP33N60M2 is an N-channel Power MOSFET with the following key features:
- Voltage Rating: 600V (drain-source, VDSS)
- Current Rating: 33A (continuous drain current, ID)
- Low On-Resistance: 85mΩ (RDS(on)) at 10V gate drive
- Fast Switching: Optimized for high-efficiency applications
- Avalanche Rugged: High energy capability for reliability
- Package: TO-220 (through-hole, easy mounting)
- Applications: SMPS, motor drives, inverters, and industrial systems
Designed for high-power switching, it offers low conduction losses and robust performance.

Pinout

The STP33N60M2 is a N-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-220 package: Gate, Drain, Source)
- Function: Power switching in applications like motor drives, power supplies, and inverters.
- Voltage Rating: 600V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): 0.085Ω (typical)
- Fast Switching: Suitable for high-efficiency designs.
It is commonly used in high-voltage, high-current circuits.

Application

The STP33N60M2 is a 600V, 33A N-channel MOSFET, ideal for high-power switching applications. Key application areas include:
1. Switched-Mode Power Supplies (SMPS) – Used in AC/DC and DC/DC converters.
2. Motor Control – Drives in industrial, automotive, and appliance motors.
3. Lighting Systems – High-efficiency LED drivers and ballasts.
4. Inverters & UPS – Power conversion in renewable energy and backup systems.
5. Induction Heating – High-frequency resonant circuits.
Its low on-resistance (0.065Ω) and fast switching make it suitable for energy-efficient designs.

Package

The STP33N60M2 is a Power MOSFET housed in a TO-220 package. This through-hole package is widely used for power applications due to its good thermal performance and ease of mounting on heat sinks. The TO-220 package features three leads (gate, drain, source) and is suitable for high-voltage, high-current switching.

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