STS10N3LH5

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STS10N3LH5

+Nomenclature

MOSFET N-CH 30V 10A 8SO

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series STripFET™ V
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 21mOhm @ 5A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 4.6 nC @ 5 V
Vgs(Max) ±22V
InputCapacitance(Ciss)(Max)@Vds 475 pF @ 25 V
PowerDissipation(Max) 2.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Présentation

Equivalent

Equivalent products to the STS10N3LH5 (STMicroelectronics) include:
- IRLML0030 (Infineon)
- DMN1019USN (Diodes Inc.)
- BSS138 (Nexperia/ON Semi)
- SI2301 (Vishay)
These are N-channel MOSFETs with similar specs (30V, ~1A, SOT-23 package). Verify exact parameters (RDS(on), VGS(th)) for your application.

Features

The STS10N3LH5 is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V drain-source voltage (VDSS).
- Current Rating: 10A continuous drain current (ID).
- Low On-Resistance: 30mΩ (max) at VGS = 10V, reducing power losses.
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss) for efficient high-frequency operation.
- Gate Drive: 2.5V threshold voltage (VGS(th)), suitable for low-voltage control.
- Package: Compact PowerFLAT 5x6 for space-constrained designs.
- Applications: Power management, DC-DC converters, motor control, and load switching.
Designed for efficiency and thermal performance, it’s ideal for portable and automotive electronics.

Pinout

The STS10N3LH5 is a 10A, 30V N-channel MOSFET in a PowerFLAT 3.3x3.3 package.
- Pin Count: 5 pins (though some may be internally connected for thermal/electrical performance).
- Key Functions:
- Gate (G): Controls switching.
- Drain (D): High-current input (connected to multiple pins for lower resistance).
- Source (S): Output/ground return.
- Exposed Pad: Improves thermal dissipation (typically connected to S).
Designed for high-efficiency power switching (e.g., DC-DC converters, motor drives), it features low RDS(on) (~9.5mΩ) and fast switching.

Application

The STS10N3LH5 is a low-voltage, high-performance N-channel MOSFET commonly used in:
1. Power Management – Efficient switching in DC-DC converters and voltage regulators.
2. Battery-Powered Devices – Extends battery life in portable electronics like smartphones and tablets.
3. Motor Control – Drives small motors in robotics and automotive systems.
4. Load Switching – Controls power distribution in industrial and consumer applications.
5. LED Lighting – Enables precise dimming and power control in LED drivers.
Its low on-resistance (RDS(on)) and fast switching make it ideal for energy-efficient, compact designs.

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