STLD200N4F6AG

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STLD200N4F6AG

+Nomenclature

MOSFET N-CH 40V 120A POWERFLAT

  • FabricantSemi - conducteurs optiques

  • Pièce fabricant #STLD200N4F6AG

  • Package PowerWDFN-8

  • En stock3946

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, STripFET™ F6
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6.5V, 10V
RdsOn(Max)@IdVgs 1.5mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 172 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 10700 pF @ 10 V
PowerDissipation(Max) 158W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerFlat™ (5x6) Dual Side

Présentation

Description

STLD200N4F6AG is a power transistor component manufactured by STMicroelectronics. It is part of the company's product line focused on providing efficient power management solutions. This specific model is a silicon carbide (SiC) MOSFET, which is designed to handle high-voltage and high-frequency applications with enhanced efficiency compared to traditional silicon-based MOSFETs.
The key features of the STLD200N4F6AG include its high voltage rating, typically around 1200V, and its capability to handle high current loads, making it suitable for demanding applications like power converters, inverters, and motor drives. The silicon carbide technology offers benefits such as lower on-state resistance, reduced switching losses, and better thermal performance, which contribute to overall energy efficiency and reliability.
This component is particularly beneficial in applications where efficiency, compactness, and thermal management are critical, such as in renewable energy systems, electric vehicles, and industrial equipment. Its robust design ensures longevity and durability, even under challenging operating conditions.

Equivalent

The STLD200N4F6AG is a power MOSFET manufactured by STMicroelectronics. For equivalent products, you can consider similar N-channel MOSFETs with comparable voltage, current, and RDS(on) specifications from manufacturers like Infineon, ON Semiconductor, and Vishay. For instance, Infineon's IPT004N04N might be a potential equivalent, depending on the application requirements. Always verify the specifications, such as Vds, Id, and RDS(on), to ensure suitability for your specific application.

Features

The STLD200N4F6AG is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 200A, making it suitable for high-power applications.
2. R_DS(on): The device boasts a low on-resistance, which minimizes conduction losses and improves efficiency.
3. Technology: Built using advanced STMicroelectronics STripFET F6 technology, it offers improved switching performance and reduced gate charge.
4. Thermal Management: The MOSFET is designed for enhanced thermal performance, often provided in a PowerFLAT package for efficient heat dissipation.
5. Applications: Ideal for use in synchronous rectification in SMPS, DC/DC converters, and motor control applications.
6. Robustness: The device is designed to handle high-speed switching and includes features that protect against short-circuits and voltage spikes.
These features make the STLD200N4F6AG a reliable choice for engineers seeking efficiency and performance in power management solutions.

Pinout

The STLD200N4F6AG is a power MOSFET from STMicroelectronics. It is characterized by its N-channel, 40V, 200A capabilities. The device is typically used in high-efficiency power management applications.
The STLD200N4F6AG comes in a PowerFLAT 5x6 package, which is a surface-mount package designed to provide efficient heat dissipation and a compact footprint. It has a total of 8 pins. The pin configuration is generally as follows:
1. Drain - The drain is connected to the load.
2. Gate - The gate controls the MOSFET's switching operation.
3. Source - The source is typically connected to ground or the negative side of the power supply.
4. Source - Additional source pins to ensure robust current handling (multiple source pins are often internally connected).
These pins are used to control the flow of electricity through the MOSFET, effectively switching it on or off based on the voltage applied to the gate. This makes the STLD200N4F6AG suitable for applications such as DC-DC converters, motor control, and various other power management tasks.

Manufacturer

The STLD200N4F6AG is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of products, including integrated circuits and discrete semiconductors. It serves various sectors such as industrial, automotive, personal electronics, communication equipment, and computer peripherals. The company is known for its innovation in technology and has a significant presence in the semiconductor industry globally.

Application

The STLD200N4F6AG is a power MOSFET commonly used in applications such as power management, DC-DC converters, and switch-mode power supplies (SMPS). Its low on-resistance and high current handling capabilities make it suitable for automotive applications, including electric and hybrid vehicles, where efficient power conversion is crucial. Additionally, it can be used in industrial motor drives, solar inverters, and other high-efficiency energy systems. Its robust design allows it to be implemented in harsh environments, making it ideal for both consumer electronics and industrial applications requiring reliable power switching.

Package

The STLD200N4F6AG is a MOSFET transistor, and its package type is PowerFLAT™ 5x6. This package is designed for efficient thermal management and compactness, suitable for high-power applications.

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