Images à titre indicatif uniquement
STD5NM50T4
+NomenclatureMOSFET N-CH 500V 7.5A DPAK
-
FabricantSemi - conducteurs optiques
-
Pièce fabricant #STD5NM50T4
-
En stock7853
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 7.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 800mOhm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 415 pF @ 25 V |
| PowerDissipation(Max) | 100W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Présentation
Description
STD5NM50T4 is an STMicroelectronics N-channel enhancement-mode power MOSFET. It’s designed for high-voltage switching in power electronics (switch‑mode power supplies, PFC, motor drives, inverters). The device pairs a high drain–source voltage rating with several amperes of current and low on‑resistance for efficient switching, and is available in common surface‑mount or through‑hole packages. Gate drive is typically in the 10–12 V range for full enhancement (some configurations may operate at lower logic levels with reduced performance). Design considerations include staying within the safe operating area, providing adequate heat sinking, and using proper gate protection and timing to avoid shoot‑through. For exact specifications (VDS, ID, RDS(on), Qg, switching characteristics) and package options, consult the official STD5NM50T4 datasheet.
Features
STD5NM50T4 features:
- N-channel enhancement-mode power MOSFET
- High-voltage: VDS = 500 V, suited for high-voltage switching (SMPS, PFC, motor drives)
- Continuous drain current rated for several amperes
- Robust avalanche energy rating and broad safe operating area
- Fast switching with relatively low input capacitance and gate charge
- ST's trench MOSFET technology for reliability and performance
- RoHS compliant
- Available in standard power packages (surface-mount and through-hole options) with wide temperature range (-55°C to +150°C)
- N-channel enhancement-mode power MOSFET
- High-voltage: VDS = 500 V, suited for high-voltage switching (SMPS, PFC, motor drives)
- Continuous drain current rated for several amperes
- Robust avalanche energy rating and broad safe operating area
- Fast switching with relatively low input capacitance and gate charge
- ST's trench MOSFET technology for reliability and performance
- RoHS compliant
- Available in standard power packages (surface-mount and through-hole options) with wide temperature range (-55°C to +150°C)
Pinout
- Pin count: 3 leads (Gate, Drain, Source) with a drain tab (tab tied to Drain), i.e., 3 pins plus the tab.
- Function: N-channel enhancement-mode power MOSFET used for high-voltage switching in power electronics (e.g., SMPS, DC-DC converters, motor drives).
- Function: N-channel enhancement-mode power MOSFET used for high-voltage switching in power electronics (e.g., SMPS, DC-DC converters, motor drives).
Manufacturer
Manufacturer: STMicroelectronics.
About the company: STMicroelectronics is a multinational electronics and semiconductor company headquartered in Geneva, Switzerland. It designs and manufactures a wide range of components, including MOSFETs, IGBTs, microcontrollers, sensors, and analog/digital ICs.
About the company: STMicroelectronics is a multinational electronics and semiconductor company headquartered in Geneva, Switzerland. It designs and manufactures a wide range of components, including MOSFETs, IGBTs, microcontrollers, sensors, and analog/digital ICs.
Application
STD5NM50T4 is a high-voltage N-channel MOSFET (≈500 V). Typical applications:
- Offline/off-grid switch-mode power supplies and adapters
- Power-factor correction and active-front-end circuits
- Motor control and variable-speed drives (BLDC, PMSM, induction)
- Solar inverters and battery/inverter systems
- Telecom/industrial DC-DC converters
- UPS front ends and energy-storage power electronics
- Offline/off-grid switch-mode power supplies and adapters
- Power-factor correction and active-front-end circuits
- Motor control and variable-speed drives (BLDC, PMSM, induction)
- Solar inverters and battery/inverter systems
- Telecom/industrial DC-DC converters
- UPS front ends and energy-storage power electronics
Package
TO-220AB through-hole package (N-channel MOSFET). Check the datasheet variant for any packaging differences.
