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STD2HNK60Z
+NomenclatureMOSFET N-CH 600V 2A DPAK
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STD2HNK60Z
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En stock7771
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Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 2A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.8Ohm @ 1A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 280 pF @ 25 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Présentation
Description
STD2HNK60Z is a power MOSFET in the STD family, typically a high‑voltage N‑channel device. It is used as the switching element in power electronics where a high blocking voltage (about 600 V) is required. Common applications include offline switch‑mode power supplies, motor drives, and DC‑DC converters. Features usually highlighted for parts in this class include trench MOSFET structure for low on‑resistance, good switching performance, and rugged avalanche energy. The device comes in multiple packages (through‑hole or surface‑mount) with a Gate–Drain–Source pinout. Design use requires driving the gate with an appropriate voltage, plus protection and gate‑drive circuitry, and adequate heatsinking. For exact electrical parameters (Vds, Id, Rdson, Vgs(th)), package options, and safe operating area, consult the official STD2HNK60Z datasheet from the manufacturer.
Pinout
I don’t have the exact pin count or function for STD2HNK60Z without the package/datasheet. It’s an STMicroelectronics high‑voltage device (likely around 600 V, IGBT or MOSFET), but pinout varies by package. Please provide the package type (e.g., D²PAK, TO-220, etc.) or a datasheet link and I’ll specify the exact pin count and terminal functions (Gate, Drain/Collector, Source/Emitter, plus any tab).
Manufacturer
Manufacturer: STMicroelectronics (ST).
Company type: A global (Franco-Italian) semiconductor company that designs and manufactures integrated circuits, discrete devices, sensors, and power electronics.
Company type: A global (Franco-Italian) semiconductor company that designs and manufactures integrated circuits, discrete devices, sensors, and power electronics.
Application
STD2HNK60Z is a 600 V high‑voltage fast recovery diode. Common applications include:
- Rectification and freewheeling in switch‑mode power supplies
- PFC front ends, DC‑DC converters, and inverters
- Solar/battery charging systems and UPS
- Motor drives and other high‑voltage power‑electronics circuits
These uses leverage its high voltage handling and fast recovery characteristics.
- Rectification and freewheeling in switch‑mode power supplies
- PFC front ends, DC‑DC converters, and inverters
- Solar/battery charging systems and UPS
- Motor drives and other high‑voltage power‑electronics circuits
These uses leverage its high voltage handling and fast recovery characteristics.
Package
D2PAK (TO-263) package.
