STD12N50M2

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STD12N50M2

+Nomenclature

MOSFET N-CH 500V 10A DPAK

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ M2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 10A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 380mOhm @ 5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 550 pF @ 100 V
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK

Présentation

Description

The STD12N50M2 is an N-channel MOSFET designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 500V drain-source voltage (VDSS)
- Current Handling: 12A continuous drain current (ID)
- Low On-Resistance: 0.45Ω (typical) for reduced conduction losses
- Fast Switching: Optimized for efficiency in power supplies, motor drives, and inverters
- Package: TO-252 (DPAK), offering good thermal performance
It is commonly used in SMPS (Switched-Mode Power Supplies), lighting systems, and industrial controls due to its robustness and efficiency. The device includes built-in protection against avalanche breakdown and is RoHS compliant.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the STD12N50M2 (N-channel MOSFET, 500V, 12A) include:
- STP12N50M2 (similar specs, same series)
- IRF840 (500V, 8A, lower current)
- FQP12N50C (500V, 12A, Fairchild)
- IXFH12N50P (500V, 12A, IXYS)
- 2SK2837 (500V, 12A, Toshiba)
Check datasheets for exact compatibility in your circuit.

Features

The STD12N50M2 is an N-channel MOSFET with the following key features:
- Voltage Rating: 500V drain-source voltage (VDSS).
- Current Rating: 12A continuous drain current (ID).
- Low On-Resistance: 0.45Ω (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed applications.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Avalanche Energy Rated: Improves reliability in inductive loads.
- Package: TO-252 (DPAK), suitable for surface-mount applications.
- Applications: Power supplies, motor control, lighting, and DC-DC converters.
This MOSFET balances high voltage handling with efficient switching performance.

Pinout

The STD12N50M2 is a N-channel MOSFET with 3 pins (TO-252/DPAK package):
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 500V drain-source voltage (VDS).
- 12A continuous drain current (ID).
- Low on-resistance (RDS(on) = 0.45Ω).
- Used in power switching (e.g., SMPS, motor control, inverters).
Compact and efficient for high-voltage applications.

Application

The STD12N50M2 is a 500V, 12A N-channel MOSFET commonly used in:
1. Switching Power Supplies – Efficient power conversion in SMPS.
2. Motor Control – Drives motors in industrial and automotive systems.
3. Lighting – LED drivers and ballast control.
4. DC-DC Converters – Voltage regulation in electronic circuits.
5. Inverters – Power conversion in solar and UPS systems.
Its low on-resistance (RDS(on)) and high voltage tolerance make it suitable for high-efficiency, high-power applications.

Package

The STD12N50M2 is a N-channel MOSFET typically available in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features a tab for heat dissipation. Key specs include 500V drain-source voltage and 12A continuous drain current.

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