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STB30N80K5
+NomenclatureMOSFET N-CHANNEL 800V 24A D2PAK
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STB30N80K5
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Fiche technique STB30N80K5 DataSheet
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Package TO-263-3
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En stock4481
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 24A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 43 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1530 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Présentation
Description
The STB30N80K5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It belongs to STMicroelectronics' MDmesh™ K5 series, which is known for its optimized performance in both hard- and soft-switching topologies.
Key features of the STB30N80K5 include:
- Voltage Rating: It can handle a drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
- Current Handling: The device can deliver a continuous drain current (I_D) of up to 30A.
- Low On-Resistance: It features a low R_DS(on), which helps minimize conduction losses and improve efficiency.
- Fast Switching: The MOSFET is designed for fast switching, reducing switching losses and enhancing overall performance.
- Package: Typically available in D2PAK (TO-263) packages, making it suitable for surface-mount applications.
These characteristics make the STB30N80K5 ideal for applications such as power supplies, motor drives, and other high-power electronic systems where efficiency and reliability are critical.
Key features of the STB30N80K5 include:
- Voltage Rating: It can handle a drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
- Current Handling: The device can deliver a continuous drain current (I_D) of up to 30A.
- Low On-Resistance: It features a low R_DS(on), which helps minimize conduction losses and improve efficiency.
- Fast Switching: The MOSFET is designed for fast switching, reducing switching losses and enhancing overall performance.
- Package: Typically available in D2PAK (TO-263) packages, making it suitable for surface-mount applications.
These characteristics make the STB30N80K5 ideal for applications such as power supplies, motor drives, and other high-power electronic systems where efficiency and reliability are critical.
Equivalent
The STB30N80K5 is an N-channel MOSFET used in various power applications. Equivalent products include:
1. IRFP460 - by International Rectifier (now part of Infineon).
2. FDB44N25 - by ON Semiconductor.
3. STW48N60M2 - by STMicroelectronics.
4. APT34F60B - by Microsemi.
5. IXFH50N80 - by IXYS.
Always check the datasheets for compatibility with your specific requirements.
1. IRFP460 - by International Rectifier (now part of Infineon).
2. FDB44N25 - by ON Semiconductor.
3. STW48N60M2 - by STMicroelectronics.
4. APT34F60B - by Microsemi.
5. IXFH50N80 - by IXYS.
Always check the datasheets for compatibility with your specific requirements.
Features
The STB30N80K5 is a power MOSFET from STMicroelectronics, designed for high-voltage applications. Key features include:
1. Voltage and Current Ratings: It offers a drain-source voltage (V_ds) of 800V and a continuous drain current (I_d) of 30A, making it suitable for high-voltage operations.
2. R_ds(on): The MOSFET has a low on-resistance, minimizing power loss and enhancing efficiency in power conversion applications.
3. Technology: Utilizes ST's proprietary MDmesh™ K5 technology, which optimizes performance in terms of switching speed and efficiency.
4. Package: Available in a D²PAK package, providing good thermal performance and ease of mounting on PCBs.
5. Applications: Ideal for use in power supplies, converters, and other switching applications that require efficient high-voltage power management.
6. Performance: Offers fast switching capabilities, low gate charge, and high avalanche ruggedness, contributing to reliable performance in demanding applications.
These features make the STB30N80K5 a reliable choice for engineers working on high-voltage, high-efficiency power electronics projects.
1. Voltage and Current Ratings: It offers a drain-source voltage (V_ds) of 800V and a continuous drain current (I_d) of 30A, making it suitable for high-voltage operations.
2. R_ds(on): The MOSFET has a low on-resistance, minimizing power loss and enhancing efficiency in power conversion applications.
3. Technology: Utilizes ST's proprietary MDmesh™ K5 technology, which optimizes performance in terms of switching speed and efficiency.
4. Package: Available in a D²PAK package, providing good thermal performance and ease of mounting on PCBs.
5. Applications: Ideal for use in power supplies, converters, and other switching applications that require efficient high-voltage power management.
6. Performance: Offers fast switching capabilities, low gate charge, and high avalanche ruggedness, contributing to reliable performance in demanding applications.
These features make the STB30N80K5 a reliable choice for engineers working on high-voltage, high-efficiency power electronics projects.
Pinout
The STB30N80K5 is an N-channel MOSFET. It typically comes in a D2PAK package, which has three pins plus a tab. Here's a concise description of its pin count and function:
1. Pin Count: The STB30N80K5 MOSFET has three primary pins:
- Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate regulates the flow of current between the drain and source.
- Drain (D): This is the terminal through which the main current flows from the source when the MOSFET is turned on.
- Source (S): This is the terminal through which current exits the MOSFET.
2. Tab: The metal tab (backside of the package) is typically connected to the drain and is used for heat dissipation purposes.
The STB30N80K5 is utilized in various power applications due to its high voltage capability and efficient switching characteristics. It is commonly used in power supplies, motor controls, and other power management systems.
1. Pin Count: The STB30N80K5 MOSFET has three primary pins:
- Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate regulates the flow of current between the drain and source.
- Drain (D): This is the terminal through which the main current flows from the source when the MOSFET is turned on.
- Source (S): This is the terminal through which current exits the MOSFET.
2. Tab: The metal tab (backside of the package) is typically connected to the drain and is used for heat dissipation purposes.
The STB30N80K5 is utilized in various power applications due to its high voltage capability and efficient switching characteristics. It is commonly used in power supplies, motor controls, and other power management systems.
Manufacturer
The STB30N80K5 is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. The company is one of the world's leading semiconductor companies, producing a wide range of components for various applications, including automotive, industrial, personal electronics, communications equipment, and more. STMicroelectronics is known for its innovation and development of advanced technologies, providing solutions that contribute to smarter driving, homes, cities, and workplaces.
Application
The STB30N80K5 is a power MOSFET designed for high-efficiency switching applications. It is commonly used in areas where robust and reliable power management is required. Key application areas include:
1. Switching Power Supplies: Utilized in converters and inverters for efficient power conversion.
2. Motor Control: Suitable for driving electric motors in industrial and automotive applications due to its high voltage and current handling capabilities.
3. Uninterruptible Power Supplies (UPS): Helps in ensuring consistent power delivery.
4. Renewable Energy Systems: Employed in solar inverters and wind power systems.
5. Lighting Systems: Used in high-efficiency LED drivers.
These applications benefit from its low on-resistance and high-speed switching properties, enhancing performance and reliability.
1. Switching Power Supplies: Utilized in converters and inverters for efficient power conversion.
2. Motor Control: Suitable for driving electric motors in industrial and automotive applications due to its high voltage and current handling capabilities.
3. Uninterruptible Power Supplies (UPS): Helps in ensuring consistent power delivery.
4. Renewable Energy Systems: Employed in solar inverters and wind power systems.
5. Lighting Systems: Used in high-efficiency LED drivers.
These applications benefit from its low on-resistance and high-speed switching properties, enhancing performance and reliability.
Package
The STB30N80K5 is a power MOSFET typically provided in a D²PAK package.
