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STB12NM50FDT4
+NomenclatureMOSFET N-CH 500V 12A D2PAK
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STB12NM50FDT4
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Fiche technique STB12NM50FDT4 DataSheet
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Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | FDmesh™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 400mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1000 pF @ 25 V |
| Power Dissipation (Max) | 160W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
