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STB11NM60T4
+NomenclatureMOSFET N-CH 650V 11A D2PAK
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STB11NM60T4
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Fiche technique STB11NM60T4 DataSheet
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En stock26321
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Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 450mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1000 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Présentation
Description
The STB11NM60T4 is an N-channel Power MOSFET designed for high-efficiency power switching applications. It is part of the MDmesh™ series developed by STMicroelectronics. This device is particularly suitable for applications such as power supplies, converters, and motor drives due to its high voltage capability and low on-state resistance, which allows for enhanced performance and reduced energy loss.
Key features include:
1. Voltage Rating: The STB11NM60T4 has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 11A.
3. R_DS(on): The low on-resistance ensures minimal power loss during operation.
4. Fast Switching: Optimized for fast switching to improve efficiency and reduce electromagnetic interference (EMI).
5. Package: It is typically available in a D²PAK package, which offers good thermal performance essential for handling high power levels.
This MOSFET is typically used in industrial and consumer electronics where efficient power management is crucial.
Key features include:
1. Voltage Rating: The STB11NM60T4 has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 11A.
3. R_DS(on): The low on-resistance ensures minimal power loss during operation.
4. Fast Switching: Optimized for fast switching to improve efficiency and reduce electromagnetic interference (EMI).
5. Package: It is typically available in a D²PAK package, which offers good thermal performance essential for handling high power levels.
This MOSFET is typically used in industrial and consumer electronics where efficient power management is crucial.
Equivalent
The STB11NM60T4 is an N-channel MOSFET. Equivalent products include:
1. IRF740 - 400V/10A N-channel MOSFET by International Rectifier.
2. FQA11N90C - 900V/11A N-channel MOSFET by Fairchild Semiconductor (now onsemi).
3. IXFH14N60 - 600V/14A N-channel MOSFET by IXYS.
4. STP11NM60N - Similar MOSFET by STMicroelectronics.
Always verify specifications such as voltage, current, and switching characteristics for compatibility in your application.
1. IRF740 - 400V/10A N-channel MOSFET by International Rectifier.
2. FQA11N90C - 900V/11A N-channel MOSFET by Fairchild Semiconductor (now onsemi).
3. IXFH14N60 - 600V/14A N-channel MOSFET by IXYS.
4. STP11NM60N - Similar MOSFET by STMicroelectronics.
Always verify specifications such as voltage, current, and switching characteristics for compatibility in your application.
Features
The STB11NM60T4 is a power MOSFET designed for high-efficiency switching applications. Key features include:
1. N-channel MOSFET: This device is suitable for general-purpose switching.
2. Maximum Drain-Source Voltage (Vds): 600V, allowing it to handle high voltage applications.
3. Continuous Drain Current (Id): 10 amps, which makes it suitable for moderate power levels.
4. Low On-State Resistance (Rds(on)): This ensures minimal power loss and high efficiency during operation.
5. Total Gate Charge (Qg): Provides fast switching speeds, beneficial in applications requiring quick transitions.
6. TO-220 Package: A common package type that offers good thermal performance and is easy to mount on heat sinks for better heat dissipation.
7. Enhanced Avalanche Ruggedness: Ensures reliability under extreme conditions, protecting against voltage spikes.
8. Applications: Typically used in power supplies, motor control, lighting systems, and other industrial electronics requiring efficient power management.
These features make the STB11NM60T4 a versatile component for those designing circuits that need reliable and efficient switching capabilities.
1. N-channel MOSFET: This device is suitable for general-purpose switching.
2. Maximum Drain-Source Voltage (Vds): 600V, allowing it to handle high voltage applications.
3. Continuous Drain Current (Id): 10 amps, which makes it suitable for moderate power levels.
4. Low On-State Resistance (Rds(on)): This ensures minimal power loss and high efficiency during operation.
5. Total Gate Charge (Qg): Provides fast switching speeds, beneficial in applications requiring quick transitions.
6. TO-220 Package: A common package type that offers good thermal performance and is easy to mount on heat sinks for better heat dissipation.
7. Enhanced Avalanche Ruggedness: Ensures reliability under extreme conditions, protecting against voltage spikes.
8. Applications: Typically used in power supplies, motor control, lighting systems, and other industrial electronics requiring efficient power management.
These features make the STB11NM60T4 a versatile component for those designing circuits that need reliable and efficient switching capabilities.
Pinout
The STB11NM60T4 is a power MOSFET produced by STMicroelectronics. It typically comes in a TO-220 package, which generally features three pins. The function of each pin is as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing or stopping current flow between the drain and source.
2. Drain (D): This pin is connected to the main current-carrying channel. The current flows from drain to source when the MOSFET is turned on.
3. Source (S): This is the pin through which the current exits the MOSFET. It is typically connected to the ground or a reference voltage level in many applications.
The STB11NM60T4 is used in various applications for switching and amplifying electronic signals. It is designed to handle high power and voltage, making it suitable for power management and conversion circuits.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing or stopping current flow between the drain and source.
2. Drain (D): This pin is connected to the main current-carrying channel. The current flows from drain to source when the MOSFET is turned on.
3. Source (S): This is the pin through which the current exits the MOSFET. It is typically connected to the ground or a reference voltage level in many applications.
The STB11NM60T4 is used in various applications for switching and amplifying electronic signals. It is designed to handle high power and voltage, making it suitable for power management and conversion circuits.
Manufacturer
The STB11NM60T4 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. These products include discrete and standard commodity components, application-specific integrated circuits (ASICs), full custom devices, and semi-custom devices. The company serves a variety of markets including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for its innovation and technology leadership in fields such as microcontrollers, power management, and sensors. It is headquartered in Geneva, Switzerland and operates globally, providing solutions for the electronics sector.
Application
The STB11NM60T4 is a N-channel MOSFET primarily used in power electronics applications. Its main application areas include:
1. Switch Mode Power Supplies (SMPS): Used for efficient power conversion.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. Lighting Systems: Utilized in LED and other lighting circuits.
4. Inverters: Suitable for use in power inverters for renewable energy systems.
5. Battery Chargers: Effective in managing the power flow in charging circuits.
6. UPS Systems: Ensures reliable power management in Uninterruptible Power Supplies.
7. General Purpose Switching: Used in various electronic devices for on/off control.
Its high efficiency and robustness make it suitable for these demanding environments.
1. Switch Mode Power Supplies (SMPS): Used for efficient power conversion.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. Lighting Systems: Utilized in LED and other lighting circuits.
4. Inverters: Suitable for use in power inverters for renewable energy systems.
5. Battery Chargers: Effective in managing the power flow in charging circuits.
6. UPS Systems: Ensures reliable power management in Uninterruptible Power Supplies.
7. General Purpose Switching: Used in various electronic devices for on/off control.
Its high efficiency and robustness make it suitable for these demanding environments.
Package
The STB11NM60T4 is a power MOSFET that typically comes in a D2PAK package, which is a surface-mount package designed for high power applications. It is known for its low on-resistance and robust performance in power switching applications.
