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SQJ202EP-T1_GE3
+NomenclatureMOSFET 2N-CH 12V 20A/60A PPAK SO
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FabricantSiliconix
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Pièce fabricant #SQJ202EP-T1_GE3
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Fiche technique SQJ202EP-T1_GE3 DataSheet
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Package PowerPAK® SO-8 Dual
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En stock15
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain(Id) @ 25°C | 20A, 60A |
| Rds On(Max) @ Id Vgs | 6.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 22nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 975pF @ 6V |
| Power - Max | 27W, 48W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
